m-Phenyl-benzhydrol | 873384-69-1

• 分子结构分类: 有机化合物 - 苯丙烷和聚酮 - 二芳基庚烷
• 英文名称: m-Phenyl-benzhydrol
• 英文别名: (+/-)-Phenyl-(biphenylyl-(3))-methanol；3-Phenyl-benzhydrol；(+/-)-Hydroxy-phenyl-(biphenylyl-(3))-methan；[1,1'-Biphenyl]-3-yl(phenyl)methanol；phenyl-(3-phenylphenyl)methanol
• CAS: 873384-69-1
• 化学式: C₁₉H₁₆O
• 分子量: 260.335
• InChiKey: KFPNIVANNKRSLI-UHFFFAOYSA-N

物化性质

• 熔点：
  81 °C
• 沸点：
  442.5±24.0 °C(Predicted)
• 密度：
  1.120±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4.4
• 重原子数：
  20
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.05
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  m-Phenyl-benzhydrol 在 乙酰溴 作用下， 生成 2-biphenyl-3-yl-1,1,1,2-tetraphenyl-ethane
  参考文献：
  名称：

  THE RATES OF DISSOCIATION OF PENTAARYLETHANES

  摘要：

  DOI：

  10.1021/jo01192a004
• 作为产物：
  描述：

  溴甲苯 在 叔丁基锂 、 potassium carbonate 作用下， 以 四氢呋喃 、 乙腈 、 正戊烷 为溶剂， 反应 0.75h， 生成 m-Phenyl-benzhydrol
  参考文献：
  名称：

  探索α-锂化的芳基苄基醚的反应性：抑制[1,2] -Wittig重排和机理建议

  摘要：

  通过仔细控制反应温度，用t BuLi处理芳基苄基醚有选择地导致α-锂化，生成稳定的有机锂，这些有机锂可以在被预期的[1,2] -Wittig吸附之前直接被多种选择的亲电试剂捕获。重排。这种重排已在实验和计算上进行了深入研究，使用了在芳基环上带有不同取代基的芳基α锂化苄基醚。获得的结果支持了协同的阴离子分子内添加/消除序列和自由基解离/重组序列的能力，用于解释芳基迁移的趋势。对于具有有利于阴离子途径的电子贫芳基的底物，发现了更有利的重排。

  DOI：

  10.1002/chem.201602254

文献信息

• CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
  申请人：OSAKA UNIVERSITY

  公开号：US20170052449A1

  公开（公告）日：2017-02-23

  A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

  一种图案形成方法包括将一种化学放大型光刻胶材料制成的感光树脂组成物的预定区域图案暴露于第一种放射性射线中，该放射性射线是电离辐射或波长不大于400 nm的非电离辐射。图案化暴露的光刻胶材料膜被洪水式暴露于第二种放射性射线中，该放射性射线是波长大于图案化暴露的非电离辐射的波长和大于200 nm的非电离辐射。该化学放大型光刻胶材料包括基础组分和能够在暴露时生成辐射敏感的敏化剂和酸的生成组分。生成组分包括辐射敏感的敏化剂生成剂。辐射敏感的敏化剂生成剂包括由式(A)表示的化合物。
• Chemically amplified resist material and resist pattern-forming method
  申请人：JSR CORPORATION

  公开号：US10018911B2

  公开（公告）日：2018-07-10

  A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.

  一种化学放大抗蚀剂材料包括一种在酸的作用下能溶于或不溶于显影液的聚合物成分，以及一种在曝光时能产生辐射敏感敏化剂和酸的生成成分。生成组件中的辐射敏感性酸和敏化剂生成剂或辐射敏感性酸生成剂包括辐射敏感性第一化合物和辐射敏感性第二化合物。第一化合物包括第一鎓阳离子和第一阴离子，第二化合物包括第二鎓阳离子和不同于第一阴离子的第二阴离子。第一鎓阳离子还原成自由基时释放的能量和第二鎓阳离子还原成自由基时释放的能量均小于 5.0 eV。
• Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
  申请人：TOKYO ELECTRON LIMITED

  公开号：US10025187B2

  公开（公告）日：2018-07-17

  A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

  根据本发明，一种光敏化学放大型抗蚀剂材料用于两阶段曝光光刻工艺，它包含(1)可显影碱成分和(2)通过曝光产生光敏剂和酸的成分。在由(a)酸-光敏剂发生器、(b)光敏剂前体和(c)光酸发生器组成的三个组件中，上述组件只包含(a)组件、任意两个组件或(a)至(c)的所有组件。
• 82. The pinacol–pinacolone rearrangement of phenyl-substituted benzopinacols
  作者：H. H. Hatt、A. Pilgrim、E. F. M. Stephenson

  DOI：10.1039/jr9410000478

  日期：——
• Metanolysis of phenyl-substituted benzhydryl chlorides
  作者：Gordon W. Gribble、Michael S. Smith

  DOI：10.1021/jo00817a038

  日期：1971.9