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3-羟基-戊醛二甲基缩醛 | 100911-60-2

中文名称
3-羟基-戊醛二甲基缩醛
中文别名
——
英文名称
3-hydroxy-valeraldehyde dimethylacetal
英文别名
3-Hydroxy-valeraldehyd-dimethylacetal;1,1-Dimethoxy-pentan-3-ol;1,1-Dimethoxypentan-3-ol
3-羟基-戊醛二甲基缩醛化学式
CAS
100911-60-2
化学式
C7H16O3
mdl
——
分子量
148.202
InChiKey
LTDOQXREVLFHMS-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    0.7
  • 重原子数:
    10
  • 可旋转键数:
    5
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    38.7
  • 氢给体数:
    1
  • 氢受体数:
    3

反应信息

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文献信息

  • METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND
    申请人:ADEKA CORPORATION
    公开号:US20150175642A1
    公开(公告)日:2015-06-25
    Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.
    揭示了一种具有适合用于CVD形成薄膜材料的物理性质的属烷氧化物化合物,特别是一种具有适合用于形成薄膜材料的属烷氧化物化合物。属烷氧化物化合物由通式(I)表示。还描述了包括属烷氧化物化合物的薄膜形成材料。(在公式中,R1代表甲基基团或乙基基团,R2代表氢原子或甲基基团,R3代表C1-3直链或支链烷基基团,M代表属原子或原子,n代表属原子或原子的价。
  • METAL ALKOXIDE COMPOUND, THIN FILM-FORMING STARTING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND
    申请人:Adeka Corporation
    公开号:EP2921472A1
    公开(公告)日:2015-09-23
    The present invention provides a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. Specifically, the present invention provides a metal alkoxide compound represented by general formula (I), and a thin-film-forming material including the metal alkoxide compound. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.
    本发明提供了一种属氧化烷化合物,其物理性质适用于通过 CVD 形成薄膜的材料,特别是一种属氧化烷化合物,其物理性质适用于形成薄膜的材料。具体地说,本发明提供了一种由通式(I)表示的属氧化烷化合物,以及一种包括该属氧化烷化合物的成膜材料。(式中:R1 代表甲基或乙基,R2 代表氢原子或甲基,R3 代表 C1-3 直链或支链烷基,M 代表属原子或原子,n 代表属原子或原子的价。
  • Alcohol compound
    申请人:ADEKA CORPORATION
    公开号:US10155784B2
    公开(公告)日:2018-12-18
    An alcohol compound of formula (II) in which R4 represents a methyl group or an ethyl group, R5 represents a hydrogen atom, and R6 represents a C1-3 linear or branched alkyl group. The alcohol compound has physical properties suitable for a material for forming thin films by CVD, and particularly, physical properties suitable for a material for forming metallic-copper thin films.
    式(II)的醇类化合物,其中 R4 代表甲基或乙基,R5 代表氢原子,R6 代表 C1-3 直链或支链烷基。该醇化合物具有适用于通过 CVD 形成薄膜的材料的物理性质,特别是适用于形成薄膜的材料的物理性质。
  • ALCOHOL COMPOUND
    申请人:ADEKA CORPORATION
    公开号:US20180134739A1
    公开(公告)日:2018-05-17
    Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R 1 represents a methyl group or an ethyl group, R 2 represents a hydrogen atom or a methyl group, R 3 represents a C 1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.
  • US9896468B2
    申请人:——
    公开号:US9896468B2
    公开(公告)日:2018-02-20
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