A polishing fluid for metallic films, wherein the etching rate is 10 nm/min. or less, the polishing rate under a load of 10 KPa is 200 nm/min. or more, and the contrast, a ratio of the above-mentioned polishing rate to the etching rate, is 20 or more; and a method for producing a semiconductor substrate using the same.
一种用于
金属膜的抛光液,其中蚀刻速率为 10 nm/min. 或以下,在 10 KPa 负载下的抛光速率为 200 nm/min. 或以上,对比度(上述抛光速率与蚀刻速率之比)为 20 或以上;以及使用该抛光液生产半导体衬底的方法。