acetaldehyde-(ethyl-cyclohexyl-acetal) | 99850-66-5

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: acetaldehyde-(ethyl-cyclohexyl-acetal)
• 英文别名: Acetaldehyd-(aethyl-cyclohexyl-acetal)；Acetaldehyde cyclohexyl ethyl acetal；1-ethoxyethoxycyclohexane
• CAS: 99850-66-5
• 化学式: C₁₀H₂₀O₂
• 分子量: 172.268
• InChiKey: QVYSLJGSUNHRJD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.6
• 重原子数：
  12
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  sodium ethanolate 、 alkaline earth salt of/the/ methylsulfuric acid 在 乙醇 作用下， 生成 acetaldehyde-(ethyl-cyclohexyl-acetal)
  参考文献：
  名称：

  Bogdanowa et al., Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, 1957, p. 345,349; engl. Ausg. S. 357, 360

  摘要：

  DOI：

文献信息

• QUATERNARY AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20150357204A1

  公开（公告）日：2015-12-10

  A quaternary ammonium salt compound is represented by the following formula (A-1), wherein, R 1 , R 2 , and R 3 each represent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, a part or all of hydrogen atoms in these groups may be substituted by a hydroxyl group(s), an alkoxy group(s), or a halogen atom(s), and these groups may include one or more of a carbonyl group and an ester bond; R 4 represents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, a part or all of hydrogen atoms in these groups may be substituted by an alkoxy group(s) or a halogen atom(s), and these groups may include one or more of an ether bond, a carbonyl group, an ester bond, and an amide bond; and A − represents a non-nucleophilic counter ion.

  一个四元铵盐化合物由以下式（A-1）表示，其中，R1、R2和R3分别代表烷基、烯基、芳基或芳基烷基，这些基团中的氢原子的一部分或全部可以被羟基、烷氧基或卤原子取代，这些基团中可能包括一个或多个羰基和酯键；R4代表一个单键、烷基、烯基、芳基或芳基烷基，这些基团中的氢原子的一部分或全部可以被烷氧基或卤原子取代，这些基团中可能包括一个或多个醚键、羰基、酯键和酰胺键；A−代表一个非亲核对离子。
• Reppe et al., Justus Liebigs Annalen der Chemie, 1956, vol. 601, p. 81,104
  作者：Reppe et al.

  DOI：——

  日期：——
• (Meth)Acrylate, Polymer and Resist Composition
  申请人：Ootake Atsushi

  公开号：US20080003529A1

  公开（公告）日：2008-01-03

  A polymer contains a constituent unit having a specific acetal skeleton. This polymer is able to be used as a resist resin in DUV excimer laser lithography, electron beam lithography, EUV lithography, or the like.
• (METH)ACRYLATE, POLYMER AND RESIST COMPOSITION
  申请人：Ootake Atsushi

  公开号：US20090226851A1

  公开（公告）日：2009-09-10

  A polymer contains a constituent unit having a specific acetal skeleton. This polymer is able to be used as a resist resin in DUV excimer laser lithography, electron beam lithography, EUV lithography, or the like.
• COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME
  申请人：OGIHARA Tsutomu

  公开号：US20130005150A1

  公开（公告）日：2013-01-03

  The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition. R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1) U(OR 4 ) m4 (OR 5 ) m5 (2) R 6 m6 R 7 m7 R 8 m8 Si(OR 9 ) (4-m6-m7-m8) (3) Si(OR 10 ) 4 (4)