2-Bromo-5-(1-ethoxyethoxy)-1,3-dimethylbenzene | 848442-41-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚醚
• 英文名称: 2-Bromo-5-(1-ethoxyethoxy)-1,3-dimethylbenzene
• CAS: 848442-41-1
• 化学式: C₁₂H₁₇BrO₂
• 分子量: 273.17
• InChiKey: RSJFDGQMRXTBCF-UHFFFAOYSA-N

物化性质

• 沸点：
  327.0±42.0 °C(Predicted)
• 密度：
  1.250±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4.1
• 重原子数：
  15
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2-Bromo-5-(1-ethoxyethoxy)-1,3-dimethylbenzene 在 吡啶 、 三乙基硅烷 、 四(三苯基膦)钯 、 正丁基锂 、 三氟化硼乙醚 、 caesium carbonate 、 溶剂黄146 作用下， 以 四氢呋喃 、 乙二醇二甲醚 、 乙醇 、 正己烷 、 二氯甲烷 、 水 、 乙腈 为溶剂， 反应 57.0h， 生成 2-(Cyclohexen-1-yl)-6-[(2,6-dimethyl-4-phenylmethoxyphenyl)methyl]-3-(methoxymethoxy)pyridine
  参考文献：
  名称：

  NOVEL THYROID HORMONE BETA RECEPTOR AGONIST

  摘要：

  公开号：

  EP2423194B1

文献信息

• FILM-FORMING COMPOSITION CONTAINING CROSSLINKABLE REACTIVE SILICONE
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP3222688A1

  公开（公告）日：2017-09-27

  There is provided film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. A film-forming composition comprising, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1):         R1aR2bSi(R3)4-(a+b)     Formula (1) in Formula (1), R1 is organic group of Formula (2) and is bonded to silicon atom through Si-C bond: Film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group consisting of hydrolyzable silane of Formula (3):         R7cSi(R8)4-c     Formula (3) and hydrolyzable silane of Formula (4):         (R9dSi(R10)3-d]2Ye     Formula (4) Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.

  本发明提供的成膜组合物具有良好的效果，如固化性和嵌入性以及用于半导体器件光刻工艺的抗蚀底层膜。 一种成膜组合物，包括作为硅烷的可水解硅烷、其水解产物或其水解缩合产物，其中可水解硅烷包括式（1）的可水解硅烷： R1aR2bSi(R3)4-(a+b) 式(1) 在式(1)中，R1 是式(2)的有机基团，并通过 Si-C 键与硅原子结合： 成膜组合物，其中可水解硅烷是式(1)的可水解硅烷与另一种可水解硅烷的组合，其中另一种可水解硅烷至少是从式(3)的可水解硅烷组成的组中选出的一种： R7cSi(R8)4-c 式(3) 和式 (4) 的可水解硅烷： (R9dSi(R10)3-d]2Ye 式（4） 将抗蚀剂底层成膜组合物涂在半导体衬底上并烘烤而得到的抗蚀剂底层薄膜。
• Film-forming composition containing silicone having crosslinking reactivity
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10845703B2

  公开（公告）日：2020-11-24

  A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. The film-forming composition including, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) in Formula (1), R1 is organic group of Formula (2) and is bonded to silicon atom through Si—C bond: The film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group made of hydrolyzable silane of Formula (3): R7cSi(R8)4−c  Formula (3) and hydrolyzable silane of Formula (4): R9dSi(R10)3−d2Ye  Formula (4) Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.

  一种成膜组合物，具有良好的固化性、嵌入性和抗蚀底层膜等效果，可用于半导体器件的光刻工艺。成膜组合物包括作为硅烷的可水解硅烷、其水解产物或其水解缩合产物，其中可水解硅烷包括式（1）的可水解硅烷： R1aR2bSi(R3)4-(a+b) 式(1) 在式(1)中，R1 是式(2)的有机基团，并通过 Si-C 键与硅原子结合： 成膜组合物，其中可水解硅烷是式(1)的可水解硅烷与另一种可水解硅烷的组合，其中另一种可水解硅烷至少选自式(3)的可水解硅烷组成的基团中的一种： R7cSi(R8)4-c 式(3) 和式(4)的可水解硅烷： R9dSi(R10)3-d2Ye 式（4） 将抗蚀剂底层成膜组合物涂在半导体衬底上并烘烤而得到的抗蚀剂底层薄膜。
• RADIATION SENSITIVE COMPOSITION
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20180181000A1

  公开（公告）日：2018-06-28

  A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1) R 1 a R 2 b Si(R 3 ) 4-(a+b) Formula (1) wherein R 1 is an organic group of Formula (1-2) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R 3 is a hydrolyzable group; and Formula (2) R 7 c R 8 d Si(R 9 ) 4-(c+d) Formula (2) wherein R 7 is an organic group of Formula (2-1) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R 9 is a hydrolyzable group.
• FILM-FORMING COMPOSITION CONTAINING SILICONE HAVING CROSSLINKING REACTIVITY
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20180335698A1

  公开（公告）日：2018-11-22

  A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. The film-forming composition including, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1): R 1 a R 2 b Si(R 3 ) 4-(a+b) Formula (1) in Formula (1), R 1 is organic group of Formula (2) and is bonded to silicon atom through Si—C bond: The film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group made of hydrolyzable silane of Formula (3): R 7 c Si(R 8 ) 4-c Formula (3) and hydrolyzable silane of Formula (4): R 9 d Si(R 10 ) 3-d 2 Y e Formula (4) Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.
• US8748620B2
  申请人：——

  公开号：US8748620B2

  公开（公告）日：2014-06-10