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2-Brom-α-methyl-zimtsaeure | 90772-56-8

中文名称
——
中文别名
——
英文名称
2-Brom-α-methyl-zimtsaeure
英文别名
2-Propenoic acid, 3-(2-bromophenyl)-2-methyl-;3-(2-bromophenyl)-2-methylprop-2-enoic acid
2-Brom-α-methyl-zimtsaeure化学式
CAS
90772-56-8
化学式
C10H9BrO2
mdl
——
分子量
241.084
InChiKey
HKIQRYVKZYPWRK-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.9
  • 重原子数:
    13
  • 可旋转键数:
    2
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.1
  • 拓扑面积:
    37.3
  • 氢给体数:
    1
  • 氢受体数:
    2

反应信息

  • 作为反应物:
    描述:
    2-Brom-α-methyl-zimtsaeure 作用下, 生成 3-(2-Brom-phenyl)-2,3-dibrom-2-methyl-propionsaeure
    参考文献:
    名称:
    Notes
    摘要:
    DOI:
    10.1039/jr9640001847
  • 作为产物:
    描述:
    邻溴苯甲醛三乙烯二胺甲醇 、 copper(II) choride dihydrate 、 sodium hydroxide 作用下, 以 甲醇 为溶剂, 反应 2.25h, 生成 2-Brom-α-methyl-zimtsaeure
    参考文献:
    名称:
    α-烷基 α,β-不饱和酯中的对映和非对映选择性硼共轭加成
    摘要:
    我们在无碱条件下开发了一种铜催化的对映选择性和非对映选择性硼共轭加成到 α-烷基 α,β-不饱和酯中。该方法显示出出色的对映选择性 (87–99% ee) 和中等至良好的转化率 (51–99%),尽管具有中等的非对映选择性 (1 : 1–17 : 1 dr)。证明了该协议的综合效用。
    DOI:
    10.1039/d2ob01928k
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文献信息

  • ALPHA-CINNAMIDE COMPOUNDS AND COMPOSITIONS AS HDAC8 INHIBITORS
    申请人:Forma Therapeutics, Inc.
    公开号:US20160264518A1
    公开(公告)日:2016-09-15
    The present invention relates to inhibitors of histone deacetylases, in particular HDAC8, that are useful for the treatment of cancer and other diseases and disorders, as well as the synthesis and applications of said inhibitors.
    本发明涉及组蛋白去乙酰化酶抑制剂,特别是HDAC8,用于治疗癌症和其他疾病和疾病,以及所述抑制剂的合成和应用。
  • (METH)ACRYLIC COPOLYMER, RESIN COMPOSITION, MOLDED BODY OF SAME, AND METHOD FOR PRODUCING MOLDED BODY
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:EP3517571A1
    公开(公告)日:2019-07-31
    Provided is a resin composition which is capable of forming a molded body that has excellent surface hardness, transparency, hue and weather resistance, while exhibiting excellent wet heat resistance. A resin composition which contains a (meth)acrylic copolymer (A) and a polycarbonate-based resin (B), and wherein: the (meth)acrylic copolymer (A) contains an aromatic (meth)acrylate unit (al), a methyl (meth)acrylate unit (a2) and a (meth)acrylate unit (a3) represented by formula (1); the mass ratio (al)/(a2) is from 5/95 to 85/15; the content of the unit (a3) is 0.1-10 parts by mass relative to 100 parts by mass of the total of the units (a1) and (a2); and the unit (a1) is different from the unit (a3).
    本发明提供了一种树脂组合物,该树脂组合物能够形成表面硬度、透明度、色调和耐候性极佳的模塑体,同时还具有极佳的耐湿热性。一种树脂组合物,它含有(甲基)丙烯酸共聚物(A)和聚碳酸酯基树脂(B),其中:(甲基)丙烯酸共聚物(A)含有由式(1)表示的芳香族(甲基)丙烯酸酯单元(al)、(甲基)丙烯酸甲酯单元(a2)和(甲基)丙烯酸酯单元(a3);质量比(al)/(a2)为 5/95 至 85/15;单元(a3)的含量为 0.相对于单元(a1)和(a2)总质量的 100 质量份,单元(a1)的含量为 0.1-10 质量份;单元(a1)不同于单元(a3)。
  • Alpha-cinnamide compounds and compositions as HDAC8 inhibitors
    申请人:FORMA Therapeutics, Inc.
    公开号:US10266487B2
    公开(公告)日:2019-04-23
    The present invention relates to inhibitors of histone deacetylases, in particular HDAC8, that are useful for the treatment of cancer and other diseases and disorders, as well as the synthesis and applications of said inhibitors.
    本发明涉及组蛋白去乙酰化酶(尤其是 HDAC8)的抑制剂,可用于治疗癌症及其他疾病和失调,还涉及上述抑制剂的合成和应用。
  • Photoresist composition and photoresist film using the same
    申请人:LG CHEM, LTD.
    公开号:US11537046B2
    公开(公告)日:2022-12-27
    The present invention relates to a photoresist composition capable of realizing excellent pattern performance during formation of fine patterns, and of preparing a photoresist film that is excellent in chemical stability of a plating solution, and a photoresist film using the same.
    本发明涉及一种光刻胶组合物,该组合物能够在形成精细图案时实现优异的图案性能,并能制备对电镀溶液具有优异化学稳定性的光刻胶薄膜,以及使用该组合物制备的光刻胶薄膜。
  • PHOTORESIST COMPOSITION AND PHOTORESIST FILM USING THE SAME
    申请人:LG CHEM, LTD.
    公开号:US20200209740A1
    公开(公告)日:2020-07-02
    The present invention relates to a photoresist composition capable of realizing excellent pattern performance during formation of fine patterns, and of preparing a photoresist film that is excellent in chemical stability of a plating solution, and a photoresist film using the same.
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