Fabrication of band gap tuned Cu2Zn(Sn1-xGex)(S,Se)4 absorber thin film using nanocrystal-based ink in non-toxic solvent
作者:Manjeet Singh、Tanka R. Rana、JunHo Kim
DOI:10.1016/j.jallcom.2016.03.138
日期:2016.8
Cu2ZnSn1-xGex(S,Se)4 (CZTG(S,Se)) films using nanocrystal ink, where x = 0, 0.3, 0.5, 0.7, 1 and butylamine was used as ink-solvent. By post-sulfurization and post-selenization, we improved crystal quality of as-coated films and then studied their electrical and optical properties. The band gap of sulfurized film was increased from 1.54 eV (x = 0) to 1.98 eV (x = 1) and that of selenized film from 1.07 eV
摘要 我们使用纳米晶体油墨沉积了 Ge 合金化的 Cu2ZnSn1-xGex(S,Se)4 (CZTG(S,Se)) 薄膜,其中 x = 0, 0.3, 0.5, 0.7, 1 和丁胺用作油墨溶剂。通过后硫化和后硒化,我们提高了涂层薄膜的晶体质量,然后研究了它们的电学和光学性能。随着 x 的增加,硫化膜的带隙从 1.54 eV (x = 0) 增加到 1.98 eV (x = 1),硒化膜的带隙从 1.07 eV (x = 0) 增加到 1.48 eV (x = 1) 0 到 1。带隙随 Ge 取代的变化与理论能带弯曲模型非常吻合。硫化 CZTGS(S) 和硒化 CZTGS(Se) 薄膜的拉曼峰也显示出通过用 Ge 代替 Sn 的峰值向更高波数移动,表明使用纳米晶体墨水成功制备了 Ge 合金薄膜。在硫化和硒化薄膜中,观察到晶粒尺寸随着锗含量的增加而增加。结构和光学性能结果表明,丁胺基油墨可