申请人:Shinetsu Chemical Co., Ltd.
公开号:EP1798599A1
公开(公告)日:2007-06-20
There is disclosed an antireflection film composition for forming an intermediate resist film of a multilayer resist film used in lithography comprising: at least a polymer obtained by reacting a chelating agent with a polymer having a repeating unit represented by the following general formula (1); an organic solvent; and an acid generator. There can be provided a novel antireflection film composition that exhibits high etch selection ratio to a photoresist film, that forms a dense inorganic film, whereby an excellent pattern can be formed on the overlying photoresist film, that can be removed with wet stripping, that exhibits high preservation stability and high dry etching resistance when an underlying layer is etched, and that is suitable for forming an intermediate resist film of a multilayer resist film; a patterning process in which an antireflection film is formed over a substrate by using the antireflection film composition; and a substrate having the antireflection film as an intermediate resist film.
本发明公开了一种用于形成光刻技术中使用的多层光刻胶膜的中间光刻胶膜的抗反射膜组合物,该组合物包括:至少一种通过螯合剂与具有以下通式(1)所代表的重复单元的聚合物反应而得到的聚合物;一种有机溶剂;以及一种酸发生器。本发明提供了一种新型抗反射膜组合物,该组合物对光刻胶膜具有高蚀刻选择比,可形成致密的无机膜,从而可在上覆的光刻胶膜上形成极佳的图案,该组合物可通过湿法剥离去除,当底层被蚀刻时,该组合物具有高保存稳定性和高抗干蚀刻性,并且适用于形成多层抗蚀膜的中间抗蚀膜;使用该抗反射膜组合物在基底上形成抗反射膜的图案化工艺;以及具有该抗反射膜作为中间抗蚀膜的基底。