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neopentyl 2,2-dimethylbutanoate | 287492-23-3

中文名称
——
中文别名
——
英文名称
neopentyl 2,2-dimethylbutanoate
英文别名
2,2-Dimethylpropyl 2,2-dimethylbutanoate
neopentyl 2,2-dimethylbutanoate化学式
CAS
287492-23-3
化学式
C11H22O2
mdl
——
分子量
186.294
InChiKey
FHLKNFHDRFWHPV-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.6
  • 重原子数:
    13
  • 可旋转键数:
    5
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.91
  • 拓扑面积:
    26.3
  • 氢给体数:
    0
  • 氢受体数:
    2

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量
  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    neopentyl 2,2-dimethylbutanoate氧气 作用下, 164.84 ℃ 、500.01 kPa 条件下, 反应 2.5h, 生成 3-甲基-2-丁酮2,2-二甲基丁酸溶剂黄146丙酮
    参考文献:
    名称:
    Lindsay Smith, John R.; Nagatomi, Eiji; Waddington, David J., Journal of the Chemical Society. Perkin Transactions 2 (2001), 2000, # 11, p. 2248 - 2258
    摘要:
    DOI:
  • 作为产物:
    描述:
    2,2-二甲基丁酸新戊醇硫酸 作用下, 以 甲苯 为溶剂, 以37.2%的产率得到neopentyl 2,2-dimethylbutanoate
    参考文献:
    名称:
    Smith, John R. Lindsay; Nagatomi, Eiji; Stead, Angela, Journal of the Chemical Society. Perkin transactions II, 2000, # 6, p. 1193 - 1198
    摘要:
    DOI:
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文献信息

  • PHOTORESIST COMPOSITIONS AND METHODS
    申请人:Rohm and Haas Electronic Materials Korea Ltd.
    公开号:US20170090283A1
    公开(公告)日:2017-03-30
    New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.
    提供了新的光阻剂,可用于各种应用,包括负调色剂开发过程。首选光阻剂包括第一聚合物,其中包括与聚合物骨架间隔的含有反应性氮基团的第一单元,其中氮基团在光刻处理光阻剂组合物期间产生碱性裂解产物。
  • OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY
    申请人:Rohm and Haas Electronic Materials Korea Ltd.
    公开号:US20170090287A1
    公开(公告)日:2017-03-30
    Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.
    提供了适合应用在光阻剂组合物上方的面漆组合物。首选的面漆组合物包括第一聚合物,其中第一单元包括与聚合物主链相距的含反应性氮基团,氮基团在光刻加工光阻剂组合物时产生碱性裂解产物。
  • PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND
    申请人:FUJIFILM CORPORATION
    公开号:US20160070167A1
    公开(公告)日:2016-03-10
    There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.
    提供了一种图案形成方法,包括(i)形成一种薄膜,其中包含一种感光树脂组成物,该组成物包含(A)一种特定化学式代表的化合物,(B)一种不同于化合物(A)的化合物,在接受光辐射后能够产生酸,并且(P)一种树脂,该树脂不会与从化合物(A)产生的酸发生反应,并且能够通过来自化合物(B)产生的酸的作用降低有机溶剂含有的显影剂的溶解度,(ii)曝光薄膜,(iii)使用有机溶剂含有的显影剂对曝光后的薄膜进行显影,形成负图案;上述感光树脂组成物;使用该组成物的抗蚀膜。
  • CHIRAL CONTROL
    申请人:WAVE LIFE SCIENCES PTE. LTD.
    公开号:US20150211006A1
    公开(公告)日:2015-07-30
    The present invention relates to chirally controlled oligonucleotides, chirally controlled oligonucleotide compositions, and the method of making and using the same. The invention specifically encompasses the identification of the source of certain problems with prior methodologies for preparing chiral oligonucleotides, including problems that prohibit preparation of fully chirally controlled compositions, particularly compositions comprising a plurality of oligonucleotide types. In some embodiments, the present invention provides chirally controlled oligonucleotide compositions. In some embodiments, the present invention provides methods of making chirally controlled oligonucleotides and chirally controlled oligonucleotide compositions.
    本发明涉及手性控制的寡核苷酸、手性控制的寡核苷酸组合物以及其制备和使用方法。本发明特别涵盖了鉴定以前制备手性寡核苷酸方法中某些问题的来源,包括禁止制备完全手性控制的组合物,特别是包含多种寡核苷酸类型的组合物。在某些实施例中,本发明提供了手性控制的寡核苷酸组合物。在某些实施例中,本发明提供了制备手性控制的寡核苷酸和手性控制的寡核苷酸组合物的方法。
  • PHOTORESIST OVERCOAT COMPOSITIONS
    申请人:Rohm and Haas Electronic Materials LLC
    公开号:US20160122574A1
    公开(公告)日:2016-05-05
    Photoresist overcoat compositions are provided. The compositions comprise: a matrix polymer, an additive polymer a basic quencher and an organic solvent. The additive polymer has a lower surface energy than a surface energy of the matrix polymer, and the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition. The compositions have particular applicability in the semiconductor manufacturing industry for use in negative tone development processes.
    提供了光阻覆盖层组合物。该组合物包括:基质聚合物、添加剂聚合物、碱性淬灭剂和有机溶剂。添加剂聚合物的表面能低于基质聚合物的表面能,并且添加剂聚合物在覆盖层组合物中的总固体量的1至20重量%的范围内存在。该组合物在半导体制造业中具有特定的适用性,用于负性调色剂开发过程。
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