Thiol compound, copolymer and method for producing the copolymer
申请人:Maruzen Petrochemical Co. Ltd.
公开号:US07411097B2
公开(公告)日:2008-08-12
By resolving objections in the prior art, provided are a novel copolymer suitable as a coating polymers which is excellent in adhesion to a substrate and can be used suitably as the polymer for the coating film having durability against pattern collapse in the finer pattern formation for progressed lithography technology and a method for producing the copolymer, as well as a novel thiol compound useful as a chain transfer agent in the production of the copolymer. The novel thiol compound of the present invention has the structure represented by the formula (1);
wherein R1 is a bivalent substituent selected from linear, branched or cyclic saturated hydrocarbon having 1 to 15 carbon atoms.
Novel thiol compound, copolymer and method for producing the copolymer
申请人:Yamagishi Takanori
公开号:US20070161764A1
公开(公告)日:2007-07-12
By resolving objections in the prior art, provided are a novel copolymer suitable as a coating polymers which is excellent in adhesion to a substrate and can be used suitably as the polymer for the coating film having durability against pattern collapse in the finer pattern formation for progressed lithography technology and a method for producing the copolymer, as well as a novel thiol compound useful as a chain transfer agent in the production of the copolymer. The novel thiol compound of the present invention has the structure represented by the formula (1);
wherein R
1
is a bivalent substituent selected from linear, branched or cyclic saturated hydrocarbon having 1 to 15 carbon atoms.
Production process of copolymer for semiconductor lithography
申请人:Yamagishi Takanori
公开号:US20050096447A1
公开(公告)日:2005-05-05
Efficient and reproducible production of a copolymer for lithography, which has stable quality, with little lot-to-lot variations, and is suited for film-forming and coating compositions. Radical polymerization of a monomer, which contains at least one ethylenic double bond, with an initiator, in a solvent, and purification of the reaction mixture by precipitation and filtration, in a hermetically-closable single vessel divided by a filter medium, into a first section provided with fluid feeding means and agitating means, and a second section with fluid drawing means. Feeding the reaction mixture from the fluid feeding means into the first section of the vessel, containing a poor solvent, and contacting the reaction mixture with the poor solvent to precipitate a solid; and filtering the resulting fluid, containing the precipitated solid, through the filter medium, drawing the resultant filtrate through the fluid drawing means, and then separating the precipitated solid.
Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process
申请人:Yamagishi Takanori
公开号:US20050131184A1
公开(公告)日:2005-06-16
Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.