A photoresist base material comprising an extreme ultra-violet reactive organic compound of the following formula (1),
wherein A is a central structure that is an aliphatic group having 1 to 50 carbon atoms, an aromatic group having 6 to 50 carbon atoms, an organic group containing these together or an organic group having a cyclic structure formed by repetition of these, each of B to D is an extreme ultra-violet reactive group, a group having reactivity to the action of a chromophore active to extreme ultra-violet, or a C
1
to C
50
aliphatic group, C
6
to C
50
aromatic group, an organic group containing these together or a substituent having a branched structure, containing such a reactive group, X to Z are single bonds or ether bonds, l to n are integers of 0 to 5 satisfying l+m+n>1, and A to D may contain a substituent having a heteroatom. The photoresist base material and a composition thereof enable ultrafine processing based on extreme ultra-violet.
一种光刻底材料,包括以下式子(1)的极紫外反应有机化合物,其中A是一个中心结构,为具有1到50个碳原子的脂肪族基团,具有6到50个碳原子的芳香族基团,包含这些基团的有机基团或由这些基团重复形成的环状结构的有机基团,B到D中的每一个是极紫外反应基团,具有对极紫外活性色团作用的反应性基团,或C1到C50脂肪族基团,C6到C50芳香族基团,包含这些基团的有机基团或具有支链结构的取代基,含有这样的反应性基团,X到Z是单键或
乙醚键,l到n是0到5的整数,满足l+m+n>1,且A到D可以含有一个含有杂原子的取代基。该光刻底材料及其组合物能够实现基于极紫外的超细加工。