yttrium(III) (dipivaloylmethanate)3

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: yttrium(III) (dipivaloylmethanate)3
• 英文别名: 2,2,6,6-Tetramethylheptane-3,5-dione; yttrium；2,2,6,6-tetramethylheptane-3,5-dione;yttrium
• 化学式: C₃₃H₆₀O₆Y
• 分子量: 641.742
• InChiKey: OQYNKAIYQJLEJA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.82
• 重原子数：
  40
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.82
• 拓扑面积：
  102
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  yttrium(III) (dipivaloylmethanate)3 、 lithium phthalocyanine, Li(Pc2-) 以 四氢呋喃 为溶剂， 生成 [Y(3+)(Pc)(1-)(dpm)2] radical
  参考文献：
  名称：

  酞菁自由基的一些稀土配合物的制备和表征

  摘要：

  稀土元素三(2,2,6,6-四甲基-3,5-庚二酮)配合物的反应，M3+(dpm)3 (M = Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er、Tm、Yb、Lu 和 Y) 与四氢呋喃中的锂酞菁 Li2(Pc2-) 生成新的稳定的酞菁自由基复合物 [M3+(Pc-·)(dpm)2]。

  DOI：

  10.1246/cl.1983.1167

文献信息

• Organometallic chemical vapor deposition of high<i>T</i>_<i>c</i>superconducting films using a volatile, fluorocarbon‐based precursor
  作者：Jing Zhao、Klaus‐Hermann Dahmen、Henry O. Marcy、Lauren M. Tonge、Tobin J. Marks、Bruce W. Wessels、Carl R. Kannewurf

  DOI：10.1063/1.100473

  日期：1988.10.31

  Uniform films of the high Tc superconductor YBa2Cu3O7−δ have been prepared by organometallic chemical vapor deposition using the volatile metalorganic precursors Cu(acetylacetonate)2, Y(dipivaloylmethanate)3, and Ba(heptafluorodimethyloctanedionate)2. With argon as a carrier gas and water vapor as a reactant, film growth rates of 10–30 nm/min are achieved. After annealing under oxygen, energy dispersive

  高 Tc 超导体 YBa2Cu3O7-δ 的均匀薄膜已通过有机金属化学气相沉积制备，使用挥发性金属有机前体 Cu（乙酰丙酮）2、Y（二新戊酰甲烷）3 和 Ba（七氟二甲基辛二酸）2。以氩气为载气，水蒸气为反应物，薄膜生长速度可达 10-30 nm/min。在氧气下退火后，能量色散 X 射线分析、轮廓测定和 X 射线衍射数据表明，[100] 单晶 MgO 上的这种 YBa2Cu3O7-δ 薄膜具有良好的成分和尺寸均匀性以及微晶 c 轴的优先取向垂直于基板表面。四探针电阻率测量显示，在 90 K 时开始超导，66.2 K 时电阻为零。
• Superconducting properties of Ba₂YCu₃O_7−<i>x</i>thin films prepared by chemical vapor deposition on SrTiO₃and a metal substrate
  作者：Taichi Yamaguchi、Shinya Aoki、Nobuyuki Sadakata、Osamu Kohno、Hiroshi Osanai

  DOI：10.1063/1.102311

  日期：1989.10.9

  Superconducting Ba2 YCu3 O7−x thin films were prepared by chemical vapor deposition using β‐diketonate chelates on SrTiO3 single crystalline substrates, metal substrates, and metal substrates with a polycrystalline SrTiO3 buffer. The temperatures of complete superconducting transitions were observed at 89, 81, and 84 K, respectively. Reduced critical current density of the film on a single crystalline

  在 SrTiO3 单晶衬底、金属衬底和具有多晶 缓冲液的金属衬底上，使用 β-二酮酸盐螯合物通过化学气相沉积制备超导 Ba2 YCu3 O7-x 薄膜。分别在 89、81 和 84 K 处观察到完全超导转变的温度。在 77 K 时高达 600 mT 的磁场中，单晶基板上薄膜的临界电流密度降低，但仍比粉末冶金加工样品的临界电流密度高一两个数量级。根据 X 射线衍射图，在所有样品中都证实存在取向良好的正交 Ba2 YCu3 O7-x 结构。
• In-situ growth of Y1Ba2Cu3O7−x thin films directly on sapphire by temperature-controlled chemical vapor deposition
  作者：Aiguo Feng、Li Luo、J. Martin、C.J. Maggiore

  DOI：10.1016/0921-4534(92)90875-d

  日期：1992.4

  A temperature-controlled chemical vapor deposition (TC-CVD) process was developed for in-situ growth of highly c-axis orientated Y1Ba2Cu3O7+x (YBCO) thin films directly on sapphire substrates. This new CVD process, for the first time, uses programmable temperature controllers to optimize and tailor the qualities of deposited YBCO films by precisely control the temperatures of substrates and source compounds in pre-determined temperature profiles. By employing a substrate temperature (T(s)) ramping from T(s) (high) of 825-degrees-C to T(s) (low) of 735-degrees-C during deposition, we were able to grow highest T(c) and J(c) YBCO thin films on sapphire without buffer layer. DC transport four point measurement on the as-deposited films gave a T(c(onset)) at 92 K and T(c(zero)) at 84 K. Critical current density of 4 x 10(4) A/cm2 at 77 K and zero magnetic field was obtained for the films. The as-deposited films were also characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).