A hard-mask forming composition that forms a hard mask that is used in lithography, the hard-mask forming composition including at least one of a compound represented by General Formula (sc-1) and a resin having a partial structure represented by General Formula (sc-p1). In the general formula, R
11
and R
12
are organic groups having 1 to 40 carbon atoms or hydrogen atoms; R
13
and R
14
are aromatic hydrocarbon groups having 6 to 30 carbon atoms which may have a substituent; R
13
and R
14
may be bonded to each other to form a structure having an aromatic heterocyclic ring, and the hydrogen atom of the phenylene group in the formula may be substituted with a substituent
一种硬掩膜形成组合物,用于光刻中形成硬掩膜,该硬掩膜形成组合物包括由通用公式(sc-1)表示的化合物中的至少一种和具有由通用公式(sc-p1)表示的部分结构的
树脂。在通用公式中,R11和R12是具有1至40个碳原子或氢原子的有机基团;R13和R14是具有6至30个碳原子的
芳香烃基团,可能具有取代基;R13和R14可以相互连接以形成具有芳香杂环环的结构,并且在公式中苯基的氢原子可以被取代基取代。