亚氨基二乙酸 | 742-73-4

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 中文名称: 亚氨基二乙酸
• 英文名称: Perfluor-4-methyl-cyclohexansulfonsaeure
• 英文别名: perfluoro(4-methylcyclohexane)sulfonic acid；decafluoro-4-trifluoromethyl-cyclohexanesulfonic acid；Decafluor-4-trifluormethyl-cyclohexansulfonsaeure；Perfluoro methyl cyclohexane sulfonate；1,2,2,3,3,4,5,5,6,6-decafluoro-4-(trifluoromethyl)cyclohexane-1-sulfonic acid
• CAS: 742-73-4
• 化学式: C₇HF₁₃O₃S
• 分子量: 412.128
• InChiKey: NOTIZSFOCIIJFB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  24
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  62.8
• 氢给体数：
  1
• 氢受体数：
  16

反应信息

• 作为反应物：
  描述：

  亚氨基二乙酸 在 五氯化磷 、 sodium fluoride 作用下， 生成 Perfluor-<4-methyl-cyclohexan>-sulfonsaeure-fluorid
  参考文献：
  名称：

  The Chemistry of Fluorocarbon Sulfonic Acids. I. Preparation of Anhydrides and Sulfonyl Halides

  摘要：

  DOI：

  10.1021/jo01040a019
• 作为产物：
  描述：

  对甲苯磺酰氯 在 氢氟酸 作用下， 生成 亚氨基二乙酸
  参考文献：
  名称：

  cafiicfzsojk

  摘要：

  公开号：

  US02732398A1

文献信息

• PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION
  申请人：Wada Kenji

  公开号：US20100233617A1

  公开（公告）日：2010-09-16

  A photosensitive composition includes: (A) a resin containing a repeating unit corresponding to a compound represented by the following formula (I); the resin being capable of producing an acid group upon irradiation with an actinic ray or radiation: Z-A-X—B—R   (I) wherein Z represents a group capable of becoming an acid group resulting from leaving of a cation upon irradiation with an actinic ray or radiation; A represents an alkylene group; X represents a single bond or a heteroatom-containing divalent linking group; B represents a single bond, an oxygen atom or —N(Rx)-; Rx represents a hydrogen atom or a monovalent organic group; R represents a monovalent organic group substituted by Y; when B represents —N(Rx)-, R and Rx may combine with each other to form a ring; and Y represents a polymerizable group.

  一种感光组合物包括：（A）含有与下式（I）所表示的化合物对应的重复单元的树脂；该树脂能够在受到光敏射线或辐射照射后产生酸基团：Z-A-X—B—R   （I）其中Z代表一个能够在受到光敏射线或辐射照射后由阳离子离去而形成酸基团的基团；A代表一个烷基基团；X代表一个单键或含杂原子的二价连接基团；B代表一个单键、一个氧原子或—N（Rx）-；Rx代表一个氢原子或一个一价有机基团；R代表一个通过Y取代的一价有机基团；当B代表—N（Rx）-时，R和Rx可以结合在一起形成一个环；Y代表一个可聚合的基团。
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
  申请人：Enomoto Yuichiro

  公开号：US20120282548A1

  公开（公告）日：2012-11-08

  Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.

  提供的是一种形成图案的方法，包括(i)使用光致或辐射敏感树脂组成物形成薄膜的步骤，(ii)曝光薄膜的步骤，以及(iii)使用有机溶剂含有的显影剂显影曝光后的薄膜的步骤，其中光致或辐射敏感树脂组成物包括(A)一种能够通过酸的作用降低有机溶剂含有的显影剂的溶解度的树脂，(B)一种能够在光致或辐射照射下生成酸的化合物，(D)一种溶剂，以及(G)一种具有氟原子和硅原子中的至少一种，并具有碱性或能够通过酸的作用增加碱性的化合物。
• POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION
  申请人：Takahashi Hidenori

  公开号：US20110183258A1

  公开（公告）日：2011-07-28

  A positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin capable of increasing the solubility in an alkali developer by the action of an acid, and (C) a compound having a specific structure, which decomposes by the action of an acid to generate an acid, a pattern forming method using the positive resist composition, and a compound for use in the positive resist composition are provided as a positive resist composition exhibiting good performance in terms of pattern profile, line edge roughness, pattern collapse, sensitivity and resolution in normal exposure (dry exposure), immersion exposure and double exposure, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition.

  本发明提供了一种正性光阻组合物，包括（A）一种在与光致发色剂或辐射照射时能够产生酸的化合物，（B）一种树脂，能够通过酸的作用增加在碱性显影剂中的溶解度，以及（C）一种具有特定结构的化合物，能够通过酸的作用分解产生酸。该正性光阻组合物在正常曝光（干曝光）、浸没曝光和双重曝光中表现出良好的图案形貌、线边粗糙度、图案坍塌、灵敏度和分辨率性能。同时，本发明提供了一种使用该正性光阻组合物的图案形成方法以及用于该正性光阻组合物的化合物。
• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: F: PerFHalOrg.2, 1.3.1, page 76 - 99
  作者：

  DOI：——

  日期：——
• NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD USING THE SAME
  申请人：Hoshino Wataru

  公开号：US20100203445A1

  公开（公告）日：2010-08-12

  An object of the present invention is to solve the technical task of enhancing the performance in micro-photofabrication using far ultraviolet light, particularly ArF excimer laser at a wavelength of 193 nm, and more specifically, provide a negative resist composition hardly allowing occurrence of pattern collapse and exhibiting good resolution even in the formation of a fine pattern, and a resist pattern forming method using the composition, which are a negative resist composition comprising (A) an alkali-soluble resin, (B) a compound that contains a low molecular compound having a molecular weight of 2,000 or less and having an oxetane structure, and (C) a cationic photopolymerization initiator, and a resist pattern forming method using the composition.