3-(1H-1,2,3-triazol-4-yl)benzoicacid | 1256164-22-3

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 唑类
• 英文名称: 3-(1H-1,2,3-triazol-4-yl)benzoicacid
• 英文别名: 3-(2H-triazol-4-yl)benzoic acid
• CAS: 1256164-22-3
• 化学式: C₉H₇N₃O₂
• 分子量: 189.173
• InChiKey: XJSONEOYDYTHSM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.8
• 重原子数：
  14
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  78.9
• 氢给体数：
  2
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  4-((phenylthio)methyl)-1H-1,2,3-triazole 在 水 、 三氟乙酸 作用下， 反应 24.0h， 生成 3-(1H-1,2,3-triazol-4-yl)benzoicacid
  参考文献：
  名称：

  通过铜催化的叠氮化物-炔烃环加成反应固相合成N H-1,2,3-三唑的无痕叠氮基接头

  摘要：

  对的固相合成中的广泛有用酸不稳定无痕叠氮基连接基Ñ H-1,2,3-三唑被呈现。各种炔烃通过Cu（I）介导的叠氮化物-炔烃环加成反应有效地固定在一系列聚合物载体上。负载的三唑显示出与后续肽化学的优异相容性。通过用TFA水溶液处理，很容易从固体载体中释放出纯物质（通常> 95％）。

  DOI：

  10.1021/ol102209p

文献信息

• Metal polishing slurry
  申请人：FUJIFILM Corporation

  公开号：EP1837903A2

  公开（公告）日：2007-09-26

  The metal polishing slurry according to the present invention for use in chemical mechanical polishing during semiconductor device fabrication contains at least one compound of formula (A) below and at least one compound of formula (B) or formula (C) below: [wherein R1, R2, R3, R4 and R5 are each independently hydrogen, methyl, ethyl, phenyl, amino, sulfo, carboxy, aminomethyl, carboxymethyl, sulfomethyl, o-aminophenyl, m-aminophenyl, p-aminophenyl, o-carboxyphenyl, m-carboxyphenyl, p-carboxyphenyl, o-sulfophenyl, m-sulfophenyl or p-sulfophenyl].

  根据本发明，在半导体器件制造过程中用于化学机械抛光的金属抛光浆料含有至少一种下式（A）化合物和至少一种下式（B）或（C）化合物： [其中 R1、R2、R3、R4 和 R5 各自独立地为氢、甲基、乙基、苯基、氨基、磺基、羧基、氨基甲基、羧基甲基、磺基甲基、邻氨基苯基、间氨基苯基、对氨基苯基、邻羧基苯基、间羧基苯基、对羧基苯基、邻磺基苯基、间磺基苯基或对磺基苯基]。
• Polishing liquid for metals
  申请人：Inaba Tadashi

  公开号：US20070200089A1

  公开（公告）日：2007-08-30

  A liquid for polishing metals, which is used in the chemical and/or mechanical flattening of a semiconductor device, the polishing liquid being characterized in that it comprises at least one member selected from the group consisting of tetrazoles or triazoles represented by any one of the following general formulas (I) to (III): wherein, R a represents at least one substituent selected from the group consisting of a sulfo, an amino, a phosphono, a carbamoyl, a carbamide, a sulfamoyl, and a sulfonamide group; R b represents at least one substituent selected from the group consisting of a hydroxyl, a carboxyl, a sulfo, an amino, a phosphono, a carbamoyl, a carbamide, a sulfamoyl, and a sulfonamide group; and L b represents a divalent connecting group; and R c and R d each independently represent a hydrogen atom or a substituent, and at least one of R c and R d represent a hydroxyl, a carboxyl, a sulfo, an amino, a phosphono, a carbamoyl, a carbamide, a sulfamoyl, and a sulfonamide group or a group: -L a -R e ; wherein L a represents a divalent connecting group; R e represents a hydroxyl, a carboxyl, a sulfo, an amino, a phosphono, a carbamoyl, a carbamide, a sulfamoyl or a sulfonamide group; R and R′ each independently represent a group selected from the group consisting of a hydrogen atom, alkyl groups and aryl groups; and R″ independently represents a group selected from the group consisting of alkyl groups and aryl groups.
• METAL-POLISHING LIQUID AND POLISHING METHOD THEREWITH
  申请人：TOMIGA Takamitsu

  公开号：US20080206995A1

  公开（公告）日：2008-08-28

  The present invention provides a metal-polishing liquid that is used in chemical mechanical polishing for a conductor film made of copper or a copper alloy during semiconductor device production, wherein the metal-polishing liquid comprises the following components (1), (2) and (3): (1) an amino-acid derivative represented by the following formula (I) wherein in the formula (I), R 1 represents an alkyl group having 1 to 4 carbon atoms; (2) colloidal silica in which silicon atoms on a surface thereof are at least partially modified by aluminum atoms; and (3) an oxidant.
• METAL-POLISHING LIQUID AND POLISHING METHOD
  申请人：YAMADA Toru

  公开号：US20080242090A1

  公开（公告）日：2008-10-02

  A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, wherein, in the formula (I), R 1 represents an alkyl group having 1 to 4 carbon atoms and R 2 represents an alkylene group having 1 to 4 carbon atoms.
• POLISHING LIQUID FOR METALS
  申请人：INABA Tadashi

  公开号：US20100330809A1

  公开（公告）日：2010-12-30

  A liquid for polishing metals, which is used in the chemical and/or mechanical flattening of a semiconductor device, the polishing liquid being characterized in that it comprises at least one member selected from the group consisting of tetrazoles or triazoles represented by any one of the following general formulas (I) to (III): wherein, R a represents at least one substituent selected from the group consisting of a sulfo, an amino, a phosphono, a carbamoyl, a carbamide, a sulfamoyl, and a sulfonamide group; R b represents at least one substituent selected from the group consisting of a hydroxyl, a carboxyl, a sulfo, an amino, a phosphono, a carbamoyl, a carbamide, a sulfamoyl, and a sulfonamide group; and L b represents a divalent connecting group; and R c and R d each independently represent a hydrogen atom or a substituent, and at least one of R c and R d represent a hydroxyl, a carboxyl, a sulfo, an amino, a phosphono, a carbamoyl, a carbamide, a sulfamoyl, and a sulfonamide group or a group: -L a -R e ; wherein L a represents a divalent connecting group; R e represents a hydroxyl, a carboxyl, a sulfo, an amino, a phosphono, a carbamoyl, a carbamide, a sulfamoyl or a sulfonamide group; R and R′ each independently represent a group selected from the group consisting of a hydrogen atom, alkyl groups and aryl groups; and R″ independently represents a group selected from the group consisting of alkyl groups and aryl groups.