bis[[(Z)-octadec-9-enoyl]oxy]lead

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: bis[[(Z)-octadec-9-enoyl]oxy]lead
• 化学式: C36H66O4Pb
• 分子量: 770.0
• InChiKey: OGWDBCXXWRKGJC-CVBJKYQLSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  11.68
• 重原子数：
  41
• 可旋转键数：
  34
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.83
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  diacetyloxylead;trihydrate 、 油酸 在 氮气 作用下， 以 二苯醚 为溶剂， 反应 0.5h， 生成 bis[[(Z)-octadec-9-enoyl]oxy]lead
  参考文献：
  名称：

  DEVICE COMPRISING DOPED NANO-COMPONENT AND METHOD OF FORMING THE DEVICE

  摘要：

  公开了一种包括掺杂半导体纳米组件的装置和制造该装置的方法。纳米组件可以是纳米管、纳米线或纳米晶膜，可以通过暴露于含有有机胺掺杂剂中进行掺杂。给出了以铅硒纳米线或纳米晶膜为通道的场效应晶体管的示例和制造这些装置的方法。

  公开号：

  US20080230849A1

文献信息

• Method for the preparation of IV-VI semiconductor nanoparticles
  申请人：Cho Kyung-Sang

  公开号：US20060110313A1

  公开（公告）日：2006-05-25

  A high temperature (on the order of about 90° C. or above) non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles (quantum dots) is provided. The procedure includes first introducing a first precursor selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element into a reaction vessel that comprises at least an organic solvent to form a mixture. Next, the mixture is heated to a temperature of about 90° C. or above and thereafter a second precursor which is different from the first precursor and is selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element is added into the heated mixture. The reaction mixture is then mixed to initiate nucleation of IV-VI nanocrystals and the temperature of the reaction mixture is controlled to provide substantially monodispersed IV-VI nanoparticles having a diameter of about 20 nm or less.

  提供了一种高温（大约90°C或以上）的非水合成方法，用于制备基本单分散的IV-VI半导体纳米颗粒（量子点）。该方法首先将选自Group IV元素的分子前体或Group VI元素的分子前体之一的第一前体引入至至少包含有机溶剂的反应容器中形成混合物。接下来，将混合物加热至大约90°C或以上，然后向加热的混合物中加入与第一前体不同的第二前体，所述第二前体选自Group IV元素的分子前体或Group VI元素的分子前体之一。然后混合反应物以启动IV-VI纳米晶的成核，并控制反应物的温度，以提供直径约为20nm或更小的基本单分散的IV-VI纳米颗粒。
• Device comprising doped nano-component and method of forming the device
  申请人：Afzali-Ardakani Ali

  公开号：US20060105513A1

  公开（公告）日：2006-05-18

  A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.

  本发明公开了一种包括掺杂半导体纳米组件的装置和制备该装置的方法。该纳米组件可以是纳米管、纳米线或纳米晶膜之一，可以通过暴露于含有有机胺掺杂剂的物质中进行掺杂。为通道包括铅硒纳米线或纳米晶膜的场效应晶体管提供了说明性示例以及制备这些装置的方法。
• One-Pot Synthesis of High-Quality Metal Chalcogenide Nanocrystals Without Precursor Injection
  申请人：Cao Yunwei Charles

  公开号：US20090084307A1

  公开（公告）日：2009-04-02

  A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent, and a fluid comprising a reducing agent in a reaction pot at a first temperature to form a liquid comprising assembly; increasing the temperature of the assembly to a sufficient-temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals; and growing the plurality of metal chalcogenide nanocrystals without injection of either the metal source or the chalcogen oxide at a temperature equal to or greater than the sufficient-temperature, wherein crystal growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. Well controlled monodispersed CdSe nanocrystals of various sizes can be prepared by choice of the metal source and solvent system.

  一种无需前体注入形成单分散金属硫族化合物纳米晶体的方法，包括以下步骤：将金属源、硫族氧化物或硫族氧化物等效物和包含还原剂的流体在反应釜中在第一温度下混合形成液体组装体；将组装体的温度提高到足够的温度以启动成核以形成多个金属硫族化合物纳米晶体；并在等于或高于足够温度的温度下生长多个金属硫族化合物纳米晶体，而不注入金属源或硫族氧化物，其中晶体生长在很大程度上进行而不需要成核以形成多个单分散金属硫族化合物纳米晶体。通过选择金属源和溶剂系统可以制备各种尺寸的良好控制的单分散CdSe纳米晶体。
• Device comprising doped nano-component
  申请人：International Business Machines Corporation

  公开号：US07982274B2

  公开（公告）日：2011-07-19

  A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.

  本发明公开了一种包括掺杂半导体纳米组件的装置及其制备方法。该纳米组件为纳米管、纳米线或纳米晶膜之一，可以通过暴露于含有有机胺掺杂剂中而进行掺杂。给出了以铅硒纳米线或纳米晶膜为通道的场效应晶体管的示例和制备这些装置的方法。
• One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection
  申请人：University of Florida Research Foundation, Inc.

  公开号：US08137457B2

  公开（公告）日：2012-03-20

  A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent, and a fluid comprising a reducing agent in a reaction pot at a first temperature to form a liquid comprising assembly; increasing the temperature of the assembly to a sufficient-temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals; and growing the plurality of metal chalcogenide nanocrystals without injection of either the metal source or the chalcogen oxide at a temperature equal to or greater than the sufficient-temperature, wherein crystal growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. Well controlled monodispersed CdSe nanocrystals of various sizes can be prepared by choice of the metal source and solvent system.

  一种制备单分散金属硫属化物纳米晶体的方法，不需要前驱体注入，包括以下步骤：在第一温度下将金属源、硫属氧化物或硫属氧化物等效物和包含还原剂的流体组合在反应罐中形成液态组合物；将组合物的温度升高到足够的温度以启动成核形成多个金属硫属化物纳米晶体；在等于或高于足够温度的温度下生长多个金属硫属化物纳米晶体，而不注入金属源或硫属氧化物，其中晶体生长在很大程度上在没有成核的情况下进行，形成多个单分散金属硫属化物纳米晶体。通过选择金属源和溶剂系统，可以制备各种尺寸的良好控制的单分散CdSe纳米晶体。