FBB-DTT | 1155850-84-2

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: FBB-DTT
• 英文别名: [10-(2,3,4,5,6-Pentafluorobenzoyl)-3,7,11-trithiatricyclo[6.3.0.02,6]undeca-1(8),2(6),4,9-tetraen-4-yl]-phenylmethanone
• CAS: 1155850-84-2
• 化学式: C₂₂H₇F₅O₂S₃
• 分子量: 494.486
• InChiKey: IREXXUDQDUEWNP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.7
• 重原子数：
  32
• 可旋转键数：
  4
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  119
• 氢给体数：
  0
• 氢受体数：
  10

反应信息

• 作为产物：
  描述：

  FB-DTT 、 苯甲酰氯 在 aluminum (III) chloride 作用下， 以 二氯甲烷 为溶剂， 反应 24.0h， 以145 mg的产率得到FBB-DTT
  参考文献：
  名称：

  一锅[1 + 1 + 1]合成二噻吩并[2,3-b：3'，2'-d]噻吩（DTT）及其有机薄膜晶体管的功能化衍生物。

  摘要：

  二噻吩并[2,3-b：3'，2'-d]噻吩（;）的简便的一锅[1 + 1 + 1]合成已实现，从而可以有效地实现基于DTT的新型半导体系列用于有机薄膜晶体管（OTFT）。

  DOI：

  10.1039/b820621j

文献信息

• Functionalized dithieno[2,3-b:3′,2′-d]thiophenes (DTTs) for organic thin-film transistors
  作者：Choongik Kim、Ming-Chou Chen、Yen-Ju Chiang、Yue-Jhih Guo、Jangdae Youn、Hui Huang、You-Jhih Liang、Yu-Jou Lin、Yu-Wen Huang、Tarng-Shiang Hu、Gene-Hsiang Lee、Antonio Facchetti、Tobin J. Marks

  DOI：10.1016/j.orgel.2010.01.022

  日期：2010.5

  A series of dithieno[2,3-b:3',2'-d]thiophene (DTT;1) derivatives were synthesized and characterized. Facile, one-pot [2 + 1] and [1 + 1 + 1] synthetic methods of DTT were developed, which enabled the efficient realization of a new DTT-based semiconductor series for organic thin-film transistors (OTFTs). These DTTs are end-functionalized with perfluorophenyl (FP-), perfluorobenzoyl (FB-), benzoyl (B-), 2-naphthylcarbonyl (Np-), 2-benzothiazolyl (BS-), 2-thienylcarbonyl (T-), and 2-(5-hexyl)thienylcarbonyl (HT-) groups. The molecular structures of DFP-DTT (3), DFB-DTT (4), FBB-DTT (5), DB-DTT (6), and DNp-TT (7) were determined via single-crystal X-ray diffraction. Our studies reveal that the majority of these carbonyl-containing derivatives exhibit p-channel transport with hole mobilities of up to 0.01 cm(2)/Vs for DB-DTT and DBS-DTT, while perfluorobenzoyl and perfluorophenyl-substituted compounds exhibit n-channel transport with mobilities up to 0.002 cm(2)/Vs for DFB-DTT, 0.03 cm(2)/Vs for FBB-DTT, and 0.07 cm(2)/Vs for DFP-DTT, rendering the latter the DTT derivative currently having the highest electron mobility in OTFT devices. Within this family, the carrier mobility values are strongly dependent upon the semiconductor growth temperature and the dielectric surface treatment. (C) 2010 Elsevier B. V. All rights reserved.