A chemical-mechanical polishing ("CMP") composition (P) comprising
(A) inorganic particles, organic particles, or a mixture or composite thereof,
(B) at least one type of N-heterocyclic compound as corrosion inhibitor,
(C) at least one type of a further corrosion inhibitor selected from the group consisting of:
(C1) an acetylene alcohol, and
(C2) a salt or an adduct of
(C2a) an amine, and
(C2b) a carboxylic acid comprising an amide moiety,
(D) at least one type of an oxidizing agent,
(E) at least one type of a complexing agent, and
(F) an aqueous medium.
一种
化学机械抛光("
CMP")组合物(P),包括
(A) 无机颗粒、有机颗粒或它们的混合物或复合材料、
(B) 作为缓蚀剂的至少一种 N-
杂环化合物、
(C) 至少一种选自以下组别的进一步缓蚀剂
(C1)
乙炔醇,和
(C2) 以下物质的盐或加合物
(C2a) 一种胺,和
(C2b) 包含酰胺分子的
羧酸的盐或加合物、
(D) 至少一种氧化剂、
(E) 至少一种络合剂,以及
(F)
水介质。