A semiconductor device can be prepared using a precursor dielectric composition that comprises: (1) a photochemically or thermally crosslinked product of a photocurable or thermally curable thiosulfate-containing polymer that has a Tg of at least 50° C. and that comprises: an organic polymer backbone comprising (a) recurring units comprising pendant thiosulfate groups; and further comprises charge balancing cations, and (2) optionally, an electron-accepting photo sensitizer component. The electronic device can be prepared by independently applying the precursor dielectric composition and an organic semiconductor composition to a substrate to form an applied precursor dielectric composition and an applied organic semiconductor composition, respectively, and subjecting the applied precursor dielectric composition to curing conditions to form a gate dielectric layer that is in physical contact with the applied organic semiconductor composition.
可以使用前驱体介电组合物制备半导体器件,前驱体介电组合物包括:(1) 光
化学或热交联的含
硫代
硫酸盐聚合物的产物,该聚合物的 Tg 至少为 50°C,并且包括:有机聚合物主链,该聚合物主链包括(a) 包含悬挂
硫代
硫酸盐基团的循环单元;并且进一步包括电荷平衡阳离子;以及 (2) 可选的电子接受光敏剂成分。电子器件的制备方法是:将前体电介质组合物和有机半导体组合物独立地施加到基底上,以分别形成施加的前体电介质组合物和施加的有机半导体组合物,并将施加的前体电介质组合物置于固化条件下,以形成与施加的有机半导体组合物物理接触的栅极电介质层。