2,5-dimethoxy-3-methylbenzyl alcohol | 5600-82-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2,5-dimethoxy-3-methylbenzyl alcohol
• 英文别名: (2,5-Dimethoxy-3-methylphenyl)methanol
• CAS: 5600-82-8
• 化学式: C₁₀H₁₄O₃
• 分子量: 182.219
• InChiKey: VUZQOYFUZGWSRS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.3
• 重原子数：
  13
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  38.7
• 氢给体数：
  1
• 氢受体数：
  3

安全信息

• 海关编码：
  2909499000

反应信息

• 作为反应物：
  描述：

  2,5-dimethoxy-3-methylbenzyl alcohol 在 lithium methanolate 、 溴 、 三溴化磷 作用下， 以 甲醇 、 溶剂黄146 、 苯 为溶剂， 反应 47.0h， 生成 (E)-4-bromo-2,2',5,6'-tetramethoxy-3-methylstilbene
  参考文献：
  名称：

  Giles, Robin G. F.; Mitchell, Peter R. K.; Sargent, Melvyn V., Journal of the Chemical Society. Perkin transactions I, 1983, p. 2147 - 2152

  摘要：

  DOI：
• 作为产物：
  描述：

  2-甲基-4-甲氧基苯酚 在 potassium carbonate 、 calcium oxide 作用下， 以 水 为溶剂， 生成 2,5-dimethoxy-3-methylbenzyl alcohol
  参考文献：
  名称：

  Sayigh,A.A.R. et al., Journal of the Chemical Society, 1964, p. 3482 - 3484

  摘要：

  DOI：

文献信息

• Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10042258B2

  公开（公告）日：2018-08-07

  This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.

  这种用于形成极紫外（EUV）或电子束上层抗蚀剂薄膜的组合物包括（a）聚合物（P）和（b）溶剂，溶剂中的C4-12酮化合物占整个溶剂的1-13质量％，用于半导体设备制造过程中的光刻工艺。这种用于形成 EUV 或电子束上层抗蚀剂薄膜的组合物无需与抗蚀剂混合，尤其是在进行 EUV 曝光时，可阻挡不希望的曝光光（例如紫外线 (UV) 或深紫外线 (DUV)），并选择性地只透射 EUV 射线，曝光后可使用显影液进行显影。
• Nicoletti, Teresa M.; Raston, Colin L.; Sargent, Melvyn V., Journal of the Chemical Society. Perkin transactions I, 1990, # 1, p. 133 - 138
  作者：Nicoletti, Teresa M.、Raston, Colin L.、Sargent, Melvyn V.

  DOI：——

  日期：——
• Serotonin receptor affinities of psychoactive phenalkylamine analogs
  作者：Richard A. Glennon、Stephen M. Liebowitz、George M. Anderson

  DOI：10.1021/jm00177a017

  日期：1980.3

  Employing a rat fundus model, the serotonin (5-HT) receptor affinities of 45 phenalkylamine analogues were determined. Phenethylamine and phenylisopropylamine possess relatively low receptor affinities; in general, mono-, di-, and trimethoxylation enhance affinity. Of the disubstituted compounds, methoxyl groups at the 2 and 5 positions are optimal for imparting a high affinity. 4-Methylation, 4-ethylation and 4-bromination also enhance receptor affinity, while N,N-dimethylation of the terminal amine decreases affinity. alpha-Methylation of phenethylamines has little effect on affinity when racemates are examined. Introduction of a benzylic keto group can either increase or decrease affinity, depending upon the presence of other aromatic substituents. The most behaviorally active compounds were found to possess the highest 5-HT receptor affinities, while less active compounds were found to possess lower affinities.
• Radical reactions leading to substituted coumarins
  作者：Anne Giraud、Patrice Vanelle、Luc Giraud

  DOI：10.1016/s0040-4039(99)00777-7

  日期：1999.6

  The reaction of 4-hydroxycoumarins with a series of quinonic chlorides under photostimulation was shown to provide an efficient approach to 3-alkylated coumarin derivatives, Alkylation reactions of this type proceeded via an electron transfer mechanism (S(RN)1). (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
• GLENNON R. A.; LIEBOWITZ S. M.; ANDERSON III G. M., J. MED. CHEM., 1980, 23, NO 3, 294-299
  作者：GLENNON R. A.、 LIEBOWITZ S. M.、 ANDERSON III G. M.

  DOI：——

  日期：——