申请人:MITSUBISHI GAS CHEMICAL COMPANY, INC.
公开号:US11021428B2
公开(公告)日:2021-06-01
An object of the present invention is to provide a method for producing cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals, from which high purity cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals are obtained. The method for producing cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals of the present invention comprises the following steps: Step 1: measuring a mass ratio (cis/trans ratio) of cis,cis-1,2,4-cyclohexanetricarboxylic acid to trans,trans-1,2,4-cyclohexanetricarboxylic acid in an aqueous starting material solution comprising the cis,cis-1,2,4-cyclohexanetricarboxylic acid to give an aqueous starting material solution for crystal precipitation having a cis/trans ratio of 10 or more; and Step 2: subjecting the aqueous starting material solution for crystal precipitation obtained in step 1 to crystal precipitation.
本发明的目的是提供一种生产顺式,顺式-
1,2,4-环己烷三羧酸晶体的方法,从该方法中可以获得高纯度的顺式,顺式-
1,2,4-环己烷三羧酸晶体。本发明生产顺式,顺式-
1,2,4-环己烷三羧酸晶体的方法包括以下步骤:步骤 1:测量包含顺式,顺式-
1,2,4-环己烷三羧酸的起始原料
水溶液中顺式,顺式-
1,2,4-环己烷三羧酸与反式,反式-
1,2,4-环己烷三羧酸的质量比(顺式/反式比),以得到顺式/反式比为 10 或以上的晶体沉淀用起始原料
水溶液;以及 步骤 2:将步骤 1 中得到的晶体沉淀用起始原料
水溶液进行晶体沉淀。