Sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:US06689530B2
公开(公告)日:2004-02-10
A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of formula (1) wherein R is H or C1-4 alkyl or alkoxy, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is 1 or 2, q is 0 or 1, p+q=2, n is 0 or 1, m is 3 to 11, and k is 0 to 4. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution and improved pattern profile after development.
一种化学扩增型光刻胶组合物,其中包含一种磺酰基重氮甲烷化合物作为光酸发生剂,其化学式为(1),其中R为H或C1-4烷基或烷氧基,G为SO2或CO,R3为C1-10烷基或C6-14芳基,p为1或2,q为0或1,p+q=2,n为0或1,m为3至11,k为0至4。该组合物适用于微细加工,特别是通过深紫外光刻技术,因为具有许多优点,包括提高分辨率和开发后提高图案轮廓。