Dilute magnetic III–V semiconductor spintronics materials: A first-principles approach
作者:G.P. Das、B.K. Rao、P. Jena、Y. Kawazoe
DOI:10.1016/j.commatsci.2005.07.004
日期:2006.5
Group-III nitride semiconductors, such as GaN, when doped with 3d transition metals such as Mn or Cr show ferromagnetism with high Curie temperature. Such dilute magnetic semiconductors (DMS) with larger band gaps and smaller lattice constants compared to GaAs based DMS, are potential candidates for room temperature spintronics devices. We have investigated the magnetic coupling between doped Mn (or Cr) atoms in clusters as well as crystals of GaN from first principles using molecular orbital theory for (GaN)(x)TM2 clusters and TB-LMTO band calculations for wurtzite structured (Ga14TM2)N-16 supercells. Our calculations reveal that the coupling between TM-impurity atoms is ferromagnetic with a bulk magnetic moment of similar to 3.5 mu(B) per Mn atom and similar to 2.7 mu(B) per Cr atom. (c) 2005 Elsevier B.V. All rights reserved.
Kundu, Sandip Kumar; Pramanik, Animesh, Indian Journal of Chemistry - Section B Organic and Medicinal Chemistry, 2004, vol. 43, # 3, p. 595 - 603
作者:Kundu, Sandip Kumar、Pramanik, Animesh
DOI:——
日期:——
Kundu, Sandip Kumar; Mazumdar, Pooja Anjali; Das, Amit Kumar, Journal of Chemical Research - Part S, 2003, # 9, p. 574 - 575
作者:Kundu, Sandip Kumar、Mazumdar, Pooja Anjali、Das, Amit Kumar、Bertolasi, Valerio、Pramanik, Animesh