Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic and at least one ethylenically unsaturated compound contains at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component. In other embodiments, the photoresists comprise a fluorine-containing copolymer comprising a repeat unit derived from at least one polycyclic ethylenically unsaturated compound having at least one atom or group selected from the group consisting of fluorine atom, perfluoroalkyl group, and perfluoroalkoxy group, characterized in that the at least one atom or group is covalently attached to a carbon atom which is contained within a ring structure and separated from each ethylenically unsaturated carbon atom of the ethylenically unsaturated compound by at least one covalently attached carbon atom. The photoresists have high transparency in the extreme/far UV as well as the near UV, high plasma etch resistance, and are useful for microlithography in the extreme, far, and near ultraviolet (UV) region, particularly at wavelengths ≦365 nm. Novel fluorine-containing copolymers are also disclosed.
本文揭示了用于极端、远红外和近紫外微影的光阻及相关工艺。在某些实施例中,光阻包括(a)含有
氟的共聚物,包括至少一个
乙烯基不饱和化合物的重复单元,其特征在于至少一个
乙烯基不饱和化合物是多环的,至少一个
乙烯基不饱和化合物含有至少一个
氟原子共价连接到一个
乙烯基不饱和碳原子上;以及(b)至少一个光敏组分。在其他实施例中,光阻包括含有
氟的共聚物,包括至少一个多环
乙烯基不饱和化合物的重复单元,该
乙烯基不饱和化合物具有至少一个来自
氟原子、
全氟烷基和
全氟烷氧基的原子或基团,其特征在于至少一个原子或基团共价连接到一个环结构内的碳原子上,并且与每个
乙烯基不饱和碳原子之间至少有一个共价连接的碳原子相隔开。这些光阻在极端/远红外和近紫外具有高透明度,高等离子体蚀刻抗性,并且适用于极端、远红外和近紫外(UV)区域的微影,特别是在波长≤365 nm的情况下。此外,还揭示了新型含
氟共聚物。