申请人:CANON KABUSHIKI KAISHA
公开号:EP3859804A2
公开(公告)日:2021-08-04
A semiconductor device includes an anode (131), a cathode (134), a first functional layer (133B) between the anode and cathode, and a second functional layer (133C) between the first functional layer and the cathode. The first functional layer contains a first quantum dot having a first ligand, and the second functional layer contains a second quantum dot having a second ligand different from the first ligand. The second ligand is an aromatic compound having a sulfide bond and an ester bond.
一种半导体器件包括阳极(131)、阴极(134)、阳极和阴极之间的第一功能层(133B)以及第一功能层和阴极之间的第二功能层(133C)。第一功能层包含具有第一配体的第一量子点,第二功能层包含具有不同于第一配体的第二配体的第二量子点。第二配体是具有硫化键和酯键的芳香族化合物。