4-((4′-methoxyphenyl)sulfonyl)phenol | 98116-80-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-((4′-methoxyphenyl)sulfonyl)phenol
• 英文别名: 4-(4-methoxy-benzenesulfonyl)-phenol；4-(4-Methoxy-benzolsulfonyl)-phenol；4'-methoxy-4-hydroxydiphenylsulfone；4-((4-Methoxyphenyl)sulfonyl)phenol；4-(4-methoxyphenyl)sulfonylphenol
• CAS: 98116-80-4
• 化学式: C₁₃H₁₂O₄S
• 分子量: 264.302
• InChiKey: VXHUUSKYUDVHOS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  18
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.08
• 拓扑面积：
  72
• 氢给体数：
  1
• 氢受体数：
  4

安全信息

• 危险性防范说明：
  P261,P264,P270,P271,P280,P301+P312,P302+P352,P304+P340,P305+P351+P338,P330,P332+P313,P337+P313,P362,P403+P233,P405,P501
• 危险性描述：
  H302,H312,H315,H319,H332,H335

反应信息

• 作为反应物：
  描述：

  溴化氰 、 4-((4′-methoxyphenyl)sulfonyl)phenol 在 三乙胺 作用下， 以 丙酮 为溶剂， 反应 1.0h， 生成 1-cyanato-4-((4-methoxyphenyl)sulfonyl)benzene
  参考文献：
  名称：

  基于单-O-甲基化双酚与含硫桥的氰酸酯酯的合成。

  摘要：

  我们描述了基于亲代双酚的单-O-甲基化，然后残留酚羟基氰化的双酚基单氰酸酯的合成方法。通过应用IR，NMR 1 H和13 C光谱，EI和MALDI质谱法确定合成的化合物的结构，并通过HPLC控制最终产物的纯度。我们表明，氰酸酯的稳定性取决于桥基的性质。通过差示扫描量热法（DSC）确定合成的单氰酸酯的热引发的环三聚的温度范围以及反应焓。

  DOI：

  10.3390/molecules24010177
• 作为产物：
  描述：

  苯甲醚 在 三氟化硼 、 氢碘酸 、 溶剂黄146 、 三氟乙酸酐 作用下， 生成 4-((4′-methoxyphenyl)sulfonyl)phenol
  参考文献：
  名称：

  Concerning the Variable Character of the Sulfone Group

  摘要：

  DOI：

  10.1021/ja01595a037

文献信息

• Process for producing diphenyl sulfone compound
  申请人：——

  公开号：US20030092941A1

  公开（公告）日：2003-05-15

  The present invention is to provide methods for producing highly pure 4,4′-dihydroxydiphenyl sulfone monoethers advantageously in industrial production. In a process for producing a compound represented by Formula (I) 1 (wherein, R 1 and R 2 are each independently halogen, alkyl having 1 to 8 carbons or alkenyl having 2 to 8 carbons; m and n are each independently 0 or an integer of 1 to 4; and R 3 is alkyl having 1 to 8 carbons, alkenyl having 2 to 8 carbons, cycloalkyl having 3 to 8 carbons or optionally substituted aralkyl), (1) a pH adjustment is carried out twice or more in the purification process, (2) an excessive amount of alkyl halide used is removed, (3) a solvent, such as water, containing 0.05 ppm or less of iron components is used, (4) tanks with corrosion-resistant layers over the inner walls are used, (6) a chelating agent is added, and (7) a means of drying with mechanical stir is applied.

  本发明提供了一种在工业生产中优势地生产高纯度4,4'-二羟基二苯基砜单醚的方法。在生产式(I)1所表示的化合物的过程中（其中，R1和R2分别独立地表示卤素、具有1至8个碳的烷基或具有2至8个碳的烯基；m和n分别独立地表示0或1至4的整数；R3表示具有1至8个碳的烷基、具有2至8个碳的烯基、具有3至8个碳的环烷基或可选地被取代的芳基烷基），(1)在纯化过程中进行两次或更多的pH调节，(2)去除使用过量的烷基卤化物，(3)使用含有0.05ppm或更少铁组分的溶剂，例如水，(4)使用具有耐腐蚀层的内壁的罐，(6)添加螯合剂，以及(7)应用机械搅拌干燥手段。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nakajima Makoto

  公开号：US20120315765A1

  公开（公告）日：2012-12-13

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.

  提供了一种用于制备可用作硬面膜的光刻胶底层膜的抗性底层膜形成组合物。一种用于光刻胶底层膜形成的抗性底层膜形成组合物，包括硅烷化合物作为成分，所述硅烷化合物是可水解的有机硅烷、其水解产物或其水解缩合物，其中所述可水解的有机硅烷是式(1)的可水解的有机硅烷： R1aR2bSi(R3)4−(a+b) 式(1) 其中R1是式(2)： 其中R4是有机基团，R5是C1-10烷基、羟基烷基、硫化键、醚键、酯键或其组合，X1是式(3)、式(4)或式(5)： R2是有机基团，R3是可水解基团。
• SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL
  申请人：Takeda Satoshi

  公开号：US20130183830A1

  公开（公告）日：2013-07-18

  Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

  本文描述了用于形成溶剂可开发光刻胶底层膜的组合物。这些组合物可以包括一个水解性有机硅烷，其硅原子与含有受保护脂肪醇基团的有机基团结合，水解的水解性有机硅烷的水解缩合产物，或两者的组合物和溶剂。该组合物可以形成一个光刻胶底层膜，其中包括水解性有机硅烷，水解的水解性有机硅烷的水解缩合产物，或两者的组合物，硅烷化合物中的硅原子与含有受保护脂肪醇基团的有机基团的比例为总硅原子量的0.1至40%摩尔。还描述了一种将该组合物应用于半导体衬底并烘烤该组合物以形成光刻胶底层膜的方法。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150322212A1

  公开（公告）日：2015-11-12

  A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes; Formula (1): R 1 a R 2 b Si(R 3 ) 4-(a+b) wherein R 1 is an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3; Formula (2): R 4 a R 5 b Si(R 6 ) 4-(a+b) wherein, R 4 is an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.

  一种可用作硬掩膜的抗蚀底层膜。一种用于光刻的抗蚀底层膜形成组合物，包括：作为硅烷的，一种可水解的硅烷，其水解产物或其水解-缩合产物，其中可水解的硅烷包括公式（1）的可水解硅烷或含有公式（1）的可水解硅烷与公式（2）的可水解硅烷的组合物，其在所有硅烷中的摩尔分数小于50％；公式（1）：R1aR2bSi（R3）4-（a+b），其中R1是含有公式（1-1），公式（1-2）或公式（1-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数；公式（2）：R4aR5bSi（R6）4-（a+b），其中R4是含有公式（2-1），公式（2-2）或公式（2-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON CONTAINING CYCLIC ORGANIC GROUP HAVING HETERO ATOM
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150249012A1

  公开（公告）日：2015-09-03

  A resist underlayer film composition for lithography, including: a silane: at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes a silane having a cyclic organic group containing as atoms making up the ring, a carbon atom, a nitrogen atom, and a hetero atom other than a carbon and nitrogen atoms. The hydrolyzable organosilane may be a hydrolyzable organosilane of Formula (1), wherein, at least one group among R1, R2, and R3 is a group wherein a —Si(X)3 group bonds to C1-10 alkylene group, and other group(s) among R1, R2, and R3 is(are) a hydrogen atom, C1-10 alkyl group, or C6-40 aryl group; a cyclic organic group of 5-10 membered ring containing atoms making up the ring, a carbon atom, at least one of nitrogen, sulfur or oxygen atoms; and X is an alkoxy group, acyloxy group, or halogen atom.

  一种用于光刻的抗反射层底部膜组合物，包括：硅烷：至少包括一种水解性有机硅烷、其水解产物或水解缩合产物之一，其中所述硅烷包括含有环状有机基团的硅烷，所述环状有机基团的原子包括碳原子、氮原子和除碳和氮原子以外的杂原子。所述水解性有机硅烷可以是式（1）的水解性有机硅烷，其中，R1、R2和R3中至少有一个基团是一个—Si（X）3基团与C1-10烷基团结合，而R1、R2和R3中的其他基团是氢原子、C1-10烷基团或C6-40芳基团；一个含有5-10个成员环的环状有机基团，其中环状有机基团的原子包括碳原子、至少一个氮、硫或氧原子；X是烷氧基、酰氧基或卤素原子。