N,N'-diisopropyl-propionamidine | 923950-55-4

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: N,N'-diisopropyl-propionamidine
• 英文别名: N,N'-di(propan-2-yl)propanimidamide
• CAS: 923950-55-4
• 化学式: C₉H₂₀N₂
• 分子量: 156.271
• InChiKey: AZZNVCGDWVWGPF-UHFFFAOYSA-N

物化性质

• 沸点：
  243.8±7.0 °C(Predicted)
• 密度：
  0.85±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  11
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  24.4
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  四(二甲氨基)锆 、 N,N'-diisopropyl-propionamidine 以 四氢呋喃 、 三乙胺 为溶剂， 反应 4.0h， 以60%的产率得到(N,N'-diisopropylpropionamidinate)tris(dimethylamido)zirconium
  参考文献：
  名称：

  WO2007/15436

  摘要：

  公开号：
• 作为产物：
  描述：

  异丙胺 、 原丙酸三乙酯 在 溶剂黄146 、 sodium methylate 作用下， 以 甲醇 、 正庚烷 为溶剂， 反应 13.0h， 以66%的产率得到N,N'-diisopropyl-propionamidine
  参考文献：
  名称：

  WO2007/15436

  摘要：

  公开号：

文献信息

• METAL-CONTAINING COMPOUND, PROCESS FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM, AND METHOD OF FORMING THE SAME
  申请人：TOSOH CORPORATION

  公开号：EP1921061A1

  公开（公告）日：2008-05-14

  A compound having good thermal stability and appropriate vaporization characteristic as a raw material of CVD method or ALD method, its production method, a thin film formed using the compound as a raw material, and its formation method are provided. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) and a compound represented by the general formula (3), and a metal-containing thin film is formed using the same as a raw material.         [Chem. 3] Mp (NR4R5) q     (3) (In the formulae, M represents a Group 4 atom, an aluminum atom, a gallium atom or the like; n is 2 or 3 in some cases, R1 and R3 represent an alkyl group having from 1 to 6 carbon atoms, or the like; R2 represents an alkyl group having from 1 to 6 carbon atoms, or the like; R4 and R5 represent an alkyl group having from 1 to 4 carbon atoms, or the like; X represents a hydrogen atom, a lithium atom or a sodium atom; p is 1 or 2 in some cases; and q is 4 or 6 in some cases).

  本发明提供了一种作为 CVD 法或 ALD 法原料的具有良好热稳定性和适当汽化特性的化合物、其生产方法、以该化合物为原料形成的薄膜及其形成方法。 通过通式（2）表示的化合物和通式（3）表示的化合物反应制得通式（1）表示的化合物，并以其为原料形成含金属薄膜。 [化学式 3] Mp (NR4R5) q (3) (式中：M 代表第 4 族原子、铝原子、镓原子或类似物；n 在某些情况下为 2 或 3；R1 和 R3 代表具有 1 至 6 个碳原子的烷基或类似物；R2 代表具有 1 至 6 个碳原子的烷基或类似物；R4 和 R5 代表具有 1 至 4 个碳原子的烷基或类似物；X 代表氢原子、锂原子或钠原子；p 在某些情况下为 1 或 2；q 在某些情况下为 4 或 6）。
• Treatment and prevention of cardiovascular disease
  申请人：Edifice Health, Inc.

  公开号：US11359011B2

  公开（公告）日：2022-06-14

  The methods and compositions described herein improve cardiovascular outcomes using measures related to systemic chronic inflammation (the inflammatory age—iAge, the cardiovascular age—cAge, and levels of certain markers) to stratify patients into low risk and high risk groups. The personalized immune proteome signature creates an individualized initial therapy to reduce cAge and to convert high risk patients into low risk patients. High risk patients can be converted to low risk patients by treating the patients to reduce their cAge, iAge and/or improve their CRS.

  本文所述的方法和组合物利用与全身慢性炎症有关的指标（炎症年龄-iAge、心血管年龄-cAge 和某些标志物的水平）将患者分为低风险组和高风险组，从而改善心血管预后。个性化的免疫蛋白质组特征可创建个性化的初始疗法，以降低年龄，并将高风险患者转化为低风险患者。通过治疗降低患者的 cAge、iAge 和/或改善其 CRS，可将高风险患者转化为低风险患者。
• METAL-CONTAINING COMPOUND, PROCESS FOR PRODUCING THE SAME AND METHOD OF FORMING A METAL-CONTAINING THIN FILM
  申请人：TOSOH CORPORATION

  公开号：EP1921061B1

  公开（公告）日：2011-10-19
• METAL-CONTAINING COMPOUND, ITS PRODUCTION METHOD, METAL-CONTAINING THIN FILM, AND ITS FORMATION METHOD
  申请人：Tada Ken-ichi

  公开号：US20100105936A1

  公开（公告）日：2010-04-29

  A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M p (NR 4 R 5 ) q (3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R 1 and R 3 each represents C 1-6 alkyl, etc.; R 2 represents C 1-6 alkyl, etc.; R 4 and R 5 each represents C 1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)
• COBALT BASE FILM-FORMING METHOD, COBALT BASE FILM-FORMING MATERIAL, AND NOVEL COMPOUND
  申请人：Tokyo Electron Limited

  公开号：US20140248427A1

  公开（公告）日：2014-09-04

  A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.