The present invention relates to compounds of the general formula (I) wherein Z corresponds to - a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2 = C1-C18- alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3 = C1-C18-alkyl), - a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups— P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2 = C1-C18- alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3 = C1-C18-alkyl), - a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -S03H, halosilyl radicals -SiHalnR23-n (R2 = C1-C18- alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3 = C1-C18-alkyl), or - a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2 = C1-C18- alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3 = C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).
本发明涉及一般式(I)的化合物,其中Z对应于:
- 一个被卤素、
磷酸或
磷酸酯基取代的C1-C22烷基基团 -P(O)(OR1)2(其中基团R1可以相同或不同,对应于氢原子或C1-C12烷基),
-
磺酸基团-SO3H,
- 卤代
硅烷基团-SiHalnR23-n(其中R2 = C1-C18烷基,n = 1至3的整数),
- 巯基团或三烷氧基
硅烷基团-Si(OR3)3(其中R3 = C1-C18烷基),
- 一个被卤素、
磷酸或
磷酸酯基取代的C5-C12环烷基团 -P(O)(OR1)2(其中基团R1可以相同或不同,对应于氢原子或C1-C12烷基),
-
磺酸基团-SO3H,
- 卤代
硅烷基团-SiHalnR23-n(其中R2 = C1-C18烷基,n = 1至3的整数),
- 巯基团或三烷氧基
硅烷基团-Si(OR3)3(其中R3 = C1-C18烷基),
- 一个被卤素、
磷酸或
磷酸酯基取代的C6-C14芳基或杂环芳基团,从
噻吩基、
吡咯基、
呋喃基或
吡啶基的群中选择 -P(O)(OR1)2(其中基团R1可以相同或不同,对应于氢原子或C1-C12烷基),
-
磺酸基团-SO3H,
- 卤代
硅烷基团-SiHalnR23-n(其中R2 = C1-C18烷基,n = 1至3的整数),
- 巯基团或三烷氧基
硅烷基团-Si(OR3)3(其中R3 = C1-C18烷基),
- 或一个可选地被卤素、
磷酸或
磷酸酯基取代的C7-C30芳基烷基团 -P(O)(OR1)2(其中基团R1可以相同或不同,对应于氢原子或C1-C12烷基),
-
磺酸基团-SO3H,
- 卤代
硅烷基团-SiHalnR23-n(其中R2 = C1-C18烷基,n = 1至3的整数),
- 巯基团或三烷氧基
硅烷基团-Si(OR3)3(其中R3 = C1-C18烷基),
- 或三烷基
硅烷基团R5R6R7Si,其中R5、R6、R7相互独立且相同或不同的是C1-C18烷基。本发明还涉及半导体层、电子元件、电子元件的制备方法、通过该方法获得的电子元件以及一般式(I)的化合物的用途。