Provided are a pattern forming method capable of providing good DOF and LER, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film, followed by carrying out heating to 100° C. or higher, to form the upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern.
本发明提供了一种能够提供良好 DOF 和 LER 的图案形成方法、一种由该图案形成方法形成的抗蚀剂图案,以及一种包括该图案形成方法在内的电子设备制造方法。图案形成方法包括步骤 a:在基板上涂布活性光敏或辐射敏感
树脂组合物,以形成抗蚀剂薄膜;步骤 b:在抗蚀剂薄膜上涂布用于形成上层薄膜的组合物,然后加热到 100°C 或更高温度,以在抗蚀剂薄膜上形成上层薄膜;步骤 c:曝光在其上形成上层薄膜的抗蚀剂薄膜;步骤 d:使用包括有机溶剂的显影剂显影曝光的抗蚀剂薄膜,以形成图案。