Thin-film transistors of halogen-substituted tetraphenylpentacenes are investigated. These compounds exhibit mainly hole transport, but the chlorine compound shows considerably higher performance than the fluorine and bromine compounds. In addition, the chlorine compound shows ambipolar properties, though the hole mobility is four times larger than the electron mobility. These compounds have basically
研究了卤素取代的四苯基
戊烯的薄膜晶体管。这些化合物主要表现出空穴传输,但是
氯化合物显示出比
氟和
溴化合物高得多的性能。另外,尽管空穴迁移率是电子迁移率的四倍,但是
氯化合物显示出双极性性质。这些化合物具有基本相同的晶体结构,但显着的卤素依赖性可通过LUMO能级的关键位置以及分子间转移来解释,分子间转移会根据堆叠的几何形状而敏感地变化。特别地,取决于沿着分子长轴的滑移距离,空穴和电子转移表现出不同的周期性,这与电子传输性质的出现有关。