申请人:FUJIFILM Corporation
公开号:US20200035932A1
公开(公告)日:2020-01-30
The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent dark current characteristics in a case of high-speed photoelectric conversion film formation, an optical sensor, an imaging element, and a compound which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1), and an n-type organic semiconductor having a predetermined structure.
本发明提供了一种光电转换元件,其在高速光电转换薄膜形成的情况下表现出优异的响应性和优秀的暗电流特性,以及包括该光电转换元件的光学传感器、成像元件和化合物。本发明的光电转换元件包括一个导电膜、一个光电转换膜和一个透明导电膜,按照这个顺序排列,其中光电转换膜含有一个由式(1)表示的化合物和一个具有预定结构的n型有机半导体。