全氟芳基碲(IV)二卤化物对氰化物,(C 6 F 5)3 TeCl和C 6 F 5 TeTeC 6 F 5的晶体结构的反应性
摘要:
R的反应性2 TeHal 2(R = C 6 ˚F 5,4-CF 3 C ^ 6 ˚F 4朝AgCN和Me;哈尔= F,氯,溴)3进行了检查的SiCN。全氟芳基取代的二氟化碲(IV)与AgCN和Me 3 SiCN反应生成二氰化碲(IV)二氰化物(C 6 F 5)2 Te(CN)2(1)和(CF 3 C 6 F 4)2 Te( CN)2(2)。用AgCN和Me 3 SiCN处理相应的二氯化碲和二溴化碲不会导致1和2的形成。在卤代溶剂中进行反应,得到三(全氟芳基)碲化卤化物(C 6 F 5)3 TeCl(3),(C 6 F 5)3 TeBr(4),(CF 3 C 6 F 4)3 TeCl (5)和(CF 3 C 6 F 4)3 TeBr(6),而碲离子的抗衡离子取决于所用的溶剂CHCl 3或CHBr 3。所有新化合物都通过分析和光谱方法进行了研究。的结构3 - 6通过的晶体结构的测定确认3。C
only in the cases of (CF3)3GeNSO and (CF3)2Ge(NSO)2 could the pure decomposition products (CF3)3GeNSNGe(CF3)3 and (CF3)2Ge(NSN)2Ge(CF3)2 be isolated and characterized. In both reactions, the SO2-elimination is quantitative. The educts (C6F5)nP[N(SiMe3)2]3−n (n = 1,2) are synthesized for the first time from C6F5PCl2 or (C6F5)2PBr and LiN[Si(CH3)3]2, but they did not condense with SOCl2 to the corresponding
卤化物元素分别与Hg(NSO)2,AgNSO或(CH 3)3 SiNSO进行复分解反应,可提供化合物(CH 3)3 N:B(NSO)3,(CF 3)n Ge(NSO)4- n(n = 3,2),(C 6 F 5)n Ge(NSO)4− n(n = 0,1,2,3),(C 6 F 5)3 SnNSO,Si(NSO)4, (C 6 F 5)2 PNSO和(C6 F 5)2 Te(NSO)2。稳定性从C 6 F 5变为CF 3取代的衍生物并随着NSO取代程度的增加而降低。所有化合物都能在不同温度下消除SO 2,但只有在(CF 3)3 GeNSO和(CF 3)2 Ge(NSO)2的情况下,纯分解产物(CF 3)3 GeNSNGe(CF 3)3和( CF 3)2 Ge(NSN)2 Ge(CF3)2被隔离和表征。在两个反应中,SO 2消除都是定量的。离析物(C 6 ˚F 5)ñ P [N(森达3)2
The low frequency infra-red and Raman spectra of some diaryltellurium dihalides
作者:William R. McWhinnie、Mohan G. Patel
DOI:10.1039/dt9720000199
日期:——
Assignments are suggested for the low-frequency i.r. and Raman bands of the isomorphous series Ph2TeX2(X = Cl, Br, I). Resonance enhancement of the intensity of ν8(TeX) is noted for X = Br, I. The vibrational spectra of R2TeX2(R =p-tolyl, o-tolyl, p-MeOC6H4, C6F5; X = Cl, Br, I) are also reported and assignments of ν(TeX) are suggested. It is concluded that all these compounds have ψ-trigonal bipyramidal