COMPOUND, POLYMER, PATTERN FORMING MATERIAL, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
申请人:Kioxia Corporation
公开号:US20210070898A1
公开(公告)日:2021-03-11
A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below,
where R
21
is H or CH
3
, each R
22
is a hydrocarbon group of C
2-14
where α carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C
1-20
carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.
一种形成图案的材料被配置用于在待加工的薄膜上形成有机薄膜,对有机薄膜进行图案化处理,然后通过将金属化合物渗入图案化的有机薄膜来形成复合薄膜。该图案形成材料包含一种聚合物,其中包括以下通用公式(3)所表示的单体单元,其中R21为H或CH3,每个R22为碳原子为主要碳、次要碳或三级碳的C2-14烃基,Q为单键或由C1-20碳原子组成的烃基,该烃基可能在碳-碳键的碳原子之间或在键末端包括一个氧原子、一个氮原子或一个硫原子,并且卤素原子可能替代氢原子。