Synthesis of 3,3′-dihydroxy-2,2′-diindan-1,1′-dione derivatives for tautomeric organic semiconductors exhibiting intramolecular double proton transfer
作者:Kyohei Nakano、Iat Wai Leong、Daisuke Hashizume、Kirill Bulgarevich、Kazuo Takimiya、Yusuke Nishiyama、Toshio Yamazaki、Keisuke Tajima
DOI:10.1039/d3sc04125e
日期:——
applications of the 3,3′-dihydroxy-2,2′-biindan-1,1′-dione (BIT) structure as an organic semiconductor with intramolecular hydrogen bonds, a new synthetic route under mild conditions is developed based on the addition reaction of 1,3-dione to ninhydrin and the subsequent hydrogenation of the hydroxyl group. This route affords several new BIT derivatives, including asymmetrically substituted structures that
为了研究3,3'-二羟基-2,2'-联茚满-1,1'-二酮(BIT)结构作为具有分子内氢键的有机半导体的潜在应用,基于1,3-二酮与茚三酮的加成反应以及随后羟基的氢化。该路线提供了几种新的 BIT 衍生物,包括传统高温合成难以获得的不对称取代结构。 BIT 衍生物通过溶液中的分子内双质子转移表现出快速互变异构。通过 X 射线衍射法和魔角旋转13 C 固态 NMR 的可变温度测量,也可以在固态下观察到互变异构化。量子化学计算表明双质子转移和电荷传输之间可能存在相互作用。具有适合薄膜中横向电荷传输的层状堆积结构的单烷基化BIT衍生物在有机场效应晶体管中表现出高达0.012 cm 2 V -1 s -1的空穴迁移率,并且具有弱的温度依赖性。