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9H-Benzo(b)fluoren-9-one | 109241-59-0

中文名称
——
中文别名
——
英文名称
9H-Benzo(b)fluoren-9-one
英文别名
benzo[b]fluoren-9-one
9H-Benzo(b)fluoren-9-one化学式
CAS
109241-59-0
化学式
C17H10O
mdl
——
分子量
230.26
InChiKey
MZDGIVDOGXAKKV-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.9
  • 重原子数:
    18
  • 可旋转键数:
    0
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    17.1
  • 氢给体数:
    0
  • 氢受体数:
    1

文献信息

  • BIPHENYL DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS
    申请人:Kori Daisuke
    公开号:US20120252218A1
    公开(公告)日:2012-10-04
    A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing.
    提供公式(1)的二苯基衍生物,其中Ar1和Ar2表示苯环或萘环,x和z各自为0或1。含有该二苯基衍生物的材料或含有该二苯基衍生物重复单元的聚合物被旋涂并经热处理,以形成具有改进性能、最佳值的n和k、阶梯覆盖、蚀刻抗性、耐热性、耐溶剂性和最小化气体放出的抗蚀底层。
  • NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS
    申请人:Kinsho Takeshi
    公开号:US20110311920A1
    公开(公告)日:2011-12-22
    A naphthalene derivative having formula (1) is provided wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, X is a single bond or C 1 -C 10 alkylene, m is 0 or 1, and n is such a natural number as to provide a molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
  • NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS
    申请人:Kinsho Takeshi
    公开号:US20120064725A1
    公开(公告)日:2012-03-15
    A naphthalene derivative having formula (1) is provided wherein An and Art denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
  • US8835697B2
    申请人:——
    公开号:US8835697B2
    公开(公告)日:2014-09-16
  • US8795955B2
    申请人:——
    公开号:US8795955B2
    公开(公告)日:2014-08-05
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