[(2R,3R,4S,5R)-3,4,5,6-tetrahydroxy-1-oxohexan-2-yl]urea | 71868-25-2

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: [(2R,3R,4S,5R)-3,4,5,6-tetrahydroxy-1-oxohexan-2-yl]urea
• CAS: 71868-25-2
• 化学式: C₇H₁₄N₂O₆
• 分子量: 222.2
• InChiKey: VITVUDZBVHPRHH-SLPGGIOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -4
• 重原子数：
  15
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.71
• 拓扑面积：
  153
• 氢给体数：
  6
• 氢受体数：
  6

文献信息

• Polishing agent and method for polishing substrate using the polishing agent
  申请人：Hitachi Chemical Company, Ltd.

  公开号：US10040971B2

  公开（公告）日：2018-08-07

  Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

  本发明公开了一种抛光剂，包括：水、四价氢氧化金属颗粒和添加剂，其中添加剂包含阳离子聚合物和阳离子多糖中的至少一种。本发明可以提供一种抛光剂，该抛光剂能够在平整绝缘膜的 CMP 技术中高速抛光绝缘膜，且抛光缺陷少，氧化硅膜和塞子膜的抛光率比高。本发明还可以提供一种用于储存抛光剂的抛光剂组，以及使用该抛光剂对基材进行抛光的方法。
• JPS55110104A
  申请人：——

  公开号：JPS55110104A

  公开（公告）日：1980-08-25
• POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLSHING AGENT
  申请人：Hoshi Yousuke

  公开号：US20110039475A1

  公开（公告）日：2011-02-17

  Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
• POLISHING AGENT, CONCENTRATED ONE-PACK TYPE POLISHING AGENT, TWO-PACK TYPE POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE
  申请人：Ryuzaki Daisuke

  公开号：US20120129346A1

  公开（公告）日：2012-05-24

  A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water. The method for polishing a substrate of the invention comprises a step of polishing the silicon oxide film 1 (film to be polished), formed on the silicon substrate 2 having the silicon oxide film 1 , by relatively moving the silicon substrate 2 and a polishing platen, in a state that the silicon oxide film 1 is pressed against a polishing pad on the polishing platen, while supplying the polishing agent of the invention between the silicon oxide film 1 and the polishing pad.
• POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING AGENT
  申请人：HITACHI CHEMICAL COMPANY, LTD.

  公开号：US20130252426A1

  公开（公告）日：2013-09-26

  Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.