申请人:Sakamoto Rikimaru
公开号:US20120251955A1
公开(公告)日:2012-10-04
There is provided a composition for forming a resist underlayer film for electron beam or EUV lithography that is used in a device manufacture process using EUV lithography, reduces the adverse effects caused by an electron beam or EUV, and is effective for the formation of a good resist pattern and a resist pattern formation method using the composition for forming a resist underlayer film for lithography. A composition for forming a resist underlayer film for electron beam or EUV lithography, comprising: a polymer having a repeating unit structure of Formula (1):
[where Q is a group of Formula (2) or Formula (3):
where Q
1
is a C
1-10
alkylene group, a phenylene group, a naphthylene group, or an anthrylene group, X
1
is a group of Formula (4), Formula (5), or Formula (6):
and a solvent.