(+)-endo-5-oxatricyclo[6.2.1.0^2,7]undec-9-en-4-one | 389132-39-2

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 内酯类
• 英文名称: (+)-endo-5-oxatricyclo[6.2.1.0^2,7]undec-9-en-4-one
• 英文别名: 1,4,4a,5,8,8a-Hexahydro-3H-5,8-methano-2-benzopyran-3-one；4-oxatricyclo[6.2.1.02,7]undec-9-en-5-one
• CAS: 389132-39-2
• 化学式: C₁₀H₁₂O₂
• 分子量: 164.204
• InChiKey: FASFJYKNLHYSLA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.4
• 重原子数：
  12
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.7
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  tricyclo<5.2.1.0^2,6>dec-3-en-8-one 在 Escherichia coli expressing CHMO_{Acinetobacter} 、 β-环糊精 作用下， 反应 24.0h， 生成 (+)-endo-5-oxatricyclo[6.2.1.0^2,7]undec-9-en-4-one 、 (+)-endo-5-oxatricyclo[6.2.1.0^2,7]undec-9-en-4-one
  参考文献：
  名称：

  用表达细菌来源的单加氧酶的工程大肠杆菌对桥根三环酮进行 Baeyer-Villiger 氧化

  摘要：

  使用表达各种细菌来源的环戊酮 (CPMO) 和环己酮单加氧酶 (CHMO) 的大肠杆菌工程菌株进行的全细胞生物转化已被测试用于底物接受三环酮。基于生物催化 Baeyer-Villiger 氧化的立体偏好，我们最近根据蛋白质序列将该酶库聚类为两个不同的组。连同用于生产底物酮的短而容易的反应序列，微生物生物氧化能够获得对足产物内酯，作为天然产物和生物活性化合物合成中的通用构件。

  DOI：

  10.1055/s-2005-918938

文献信息

• Microbial Baeyer−Villiger Oxidation:  Stereopreference and Substrate Acceptance of Cyclohexanone Monooxygenase Mutants Prepared by Directed Evolution
  作者：Marko D. Mihovilovic、Florian Rudroff、Alexander Winninger、Toni Schneider、Frank Schulz、Manfred T. Reetz

  DOI：10.1021/ol0601040

  日期：2006.3.1

  array of random mutants of cyclohexanone monooxygenase (CHMO) from Acinetobacter sp. NCIMB 9871 was screened against a library of structurally diverse ketones for modifications in the substrate acceptance profile and stereopreference of the enzymatic Baeyer-Villiger biooxidation. While the set of mutant biocatalysts was initially evolved for the enantiocomplementary oxidation of 4-hydroxycyclohexanone

  [反应：见正文]来自不动杆菌属的环己酮单加氧酶（CHMO）的随机突变体阵列。针对结构多样的酮库对NCIMB 9871进行了筛选，以修饰底物接受度和酶促Baeyer-Villiger生物氧化的立体偏好。虽然最初开发了一组突变生物催化剂用于4-羟基环己酮的对映体互补氧化，但观察到几种底物的立体选择性有所改善和/或发散。另外，发现了扩大的底物接受度以促进空间上需要的酮的生物转化。
• Polymer for photoresist and resin compositions therefor
  申请人：——

  公开号：US20030148210A1

  公开（公告）日：2003-08-07

  A polymeric compound for photoresist of the invention includes at least one monomer unit represented by following Formula (I): 1 wherein R 1 , R 2 , R 3 , R 4 and R 5 are the same or different and are each a hydrogen atom or a methyl group; m, p and q each denote an integer of from 0 to 2; and n denotes 0 or 1, where the hydroxyl group and carbonyloxy group extending from a principle chain in the formula are independently combined with either of two carbon atoms on the far-left portion of the rings. By using the polymeric compound for photoresist as a base of a photoresist, the resulting photoresist exhibits well-rounded adhesion to substrates and resistance to etching.

  本发明的光阻聚合物化合物包括至少一个由以下式（I）表示的单体单位：1其中R1、R2、R3、R4和R5相同或不同，每个都是氢原子或甲基基团；m、p和q分别表示从0到2的整数；n表示0或1，在公式中从主链延伸的羟基和羰氧基独立地与环的最左侧部分的两个碳原子中的任意一个结合。通过将光阻聚合物化合物用作光阻的基础，所得到的光阻对基板具有良好的粘附性和耐蚀性。
• POLYMER FOR PHOTORESIST AND RESIN COMPOSITIONS THEREFOR
  申请人：Daicel Chemical Industries, Ltd.

  公开号：EP1354897A1

  公开（公告）日：2003-10-22

  A polymeric compound for photoresist of the invention includes at least one monomer unit represented by following Formula (I): wherein R1, R2, R3, R4 and R5 are the same or different and are each a hydrogen atom or a methyl group; m, p and q each denote an integer of from 0 to 2; and n denotes 0 or 1, where the hydroxyl group and carbonyloxy group extending from a principle chain in the formula are independently combined with either of two carbon atoms on the far-left portion of the rings. By using the polymeric compound for photoresist as a base of a photoresist, the resulting photoresist exhibits well-rounded adhesion to substrates and resistance to etching.

  本发明用于光刻胶的聚合物化合物包括至少一个由下式（I）表示的单体单元： 其中 R1、R2、R3、R4 和 R5 相同或不同，且各自为氢原子或甲基；m、p 和 q 分别表示 0 至 2 的整数；n 表示 0 或 1，式中从原理链延伸出来的羟基和碳酰氧基独立地与环的最左侧部分的两个碳原子中的任一个结合。 使用光刻胶用聚合物化合物作为光刻胶的基底，所制得的光刻胶对基底具有良好的附着力和抗蚀刻性。
• POLYMERIC COMPOUND CONTAINING REPEATING UNIT HAVING 2-OXATRICYCLO[4.2.1.04,8]NONAN-3-ONE RING, AND PHOTORESIST RESIN COMPOSITION
  申请人：DAICEL CHEMICAL INDUSTRIES, LTD.

  公开号：EP1681307A1

  公开（公告）日：2006-07-19

  A polymeric compound of the invention includes at least one monomer unit represented by the following formula (I); wherein Ra is a hydrogen atom, a halogen atom, an alkyl group of 1 to 6 carbon atoms or an haloalkyl group of 1 to 6 carbon atoms; each of R1 and R2 is identical to or different from a hydrogen atom or a hydrocarbon group, provided that at least one of R1 and R2 is a hydrocarbon group; R1 and R2 may be bonded together to form a ring with an adjacent carbon atom; and each of R3, R4, R5, R6, R7, R8 and R9 is identical to or different from a hydrogen atom or a hydrocarbon group. This polymeric compound has not only high substrate adhesion and high etching resistance but also high solubility for a resist solvent.

  本发明的聚合化合物包括至少一个由下式 (I) 表示的单体单元； 其中，Ra 是氢原子、卤素原子、1 至 6 个碳原子的烷基或 1 至 6 个碳原子的卤代烷基；R1 和 R2 中的每一个与氢原子或烃基相同或不同，条件是 R1 和 R2 中至少有一个是烃基；R1 和 R2 可键合在一起，与相邻的碳原子形成一个环；R3、R4、R5、R6、R7、R8 和 R9 中的每一个与氢原子或烃基相同或不同。这种聚合化合物不仅具有高基底附着力和高抗蚀刻性，而且对抗蚀剂溶剂具有高溶解性。
• Resist resin, chemical amplification type resist, and method of forming of pattern with the same
  申请人：——

  公开号：US20030211734A1

  公开（公告）日：2003-11-13

  The present invention relates to a resist resin having an acid-decomposable group, which gives rise to decomposition of the acid-decomposable group to show an increased solubility to an aqueous alkali solution by the action of an acid, wherein the resist resin has, in the main chain, an alicyclic lactone structure represented by the following general formula (1). According to the present invention, a positive-type chemically amplified resist can be obtained which has high transparency to a far-ultraviolet light having a wavelength of about 220 nm or less, excellent etching resistance, and excellent adhesion to substrate; and a fine pattern required in production of semiconductor device can be formed. 1 (wherein Z is an alicyclic hydrocarbon group having a lactone structure).

  本发明涉及一种具有可酸化基团的光刻胶树脂，在酸的作用下，可酸化基团分解，对碱水溶液的溶解度增加，其中光刻胶树脂的主链具有如下通式(1)表示的脂环内酯结构。根据本发明，可以获得一种正型化学放大抗蚀剂，该抗蚀剂对波长约为 220 nm 或以下的远紫外光具有高透明度、优异的抗蚀刻性以及与基底的优异粘附性，并且可以形成生产半导体器件所需的精细图案。 1 (其中 Z 是具有内酯结构的脂环烃基团）。