N,N-dimethylmorpholinium sulfate

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 恶嗪烷类
• 英文名称: N,N-dimethylmorpholinium sulfate
• 英文别名: 4,4-Dimethylmorpholin-4-ium;sulfate
• 化学式: C₆H₁₄NO*O₄S
• 分子量: 212.247
• InChiKey: FPWGBROIZSLJJH-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  -1.24
• 重原子数：
  13
• 可旋转键数：
  0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  97.9
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  N-甲基吗啉 、 磷酸三甲酯 以 水 为溶剂， 20.0~180.0 ℃ 、2.5 MPa 条件下， 反应 6.0h， 以92.3%的产率得到N,N-dimethylmorpholinium sulfate
  参考文献：
  名称：

  [DE] VERFAHREN ZUR HERSTELLUNG VON QUARTÄREN AMMONIUM-VERBINDUNGEN
  [EN] METHOD FOR PRODUCING QUATERNARY AMMONIUM COMPOUNDS
  [FR] PROCÉDÉ DE PRODUCTION DE COMPOSÉS D'AMMONIUM QUATERNAIRES

  摘要：

  本发明涉及一种制备季铵化合物的方法，其中将含有sp3杂化氮原子的化合物与二烷基硫酸或三烷基亚磷酸盐反应，然后将得到的铵盐进行离子交换。

  公开号：

  WO2005115969A1

文献信息

• Method for Producing Quaternary Ammonium Compounds
  申请人：Szarvas Laszlo

  公开号：US20070254822A1

  公开（公告）日：2007-11-01

  The present invention relates to a process for preparing quaternary ammonium compounds, which comprises reacting compounds comprising an sp 3 -hybridized nitrogen atom with a dialkyl sulfate or trialkyl phosphate and subjecting the resulting ammonium compound to an anion exchange.

  本发明涉及一种制备季铵盐化合物的方法，包括将含有sp3杂化氮原子的化合物与二烷基硫酸盐或三烷基磷酸酯反应，并将所得的铵盐化合物进行阴离子交换。
• Semiconductor Polishing Composition
  申请人：Ohta Yoshiharu

  公开号：US20070209288A1

  公开（公告）日：2007-09-13

  A semiconductor polishing composition is disclosed. The composition includes fumed silica, the semiconductor polishing composition being an aqueous dispersion solution of fumed silica. A content of the fumed silica includes a particle diameter of 100 nm or less is 15% by volume or more based on a total amount of the fumed silica.
• Semiconductor polishing composition
  申请人：Ohta Yoshiharu

  公开号：US20100090159A1

  公开（公告）日：2010-04-15

  A semiconductor polishing composition is provided that can, in at least one embodiment, efficiently polish a semiconductor device with high accuracy while preventing fumed silica from being agglomerated and without causing a polishing flaw in the semiconductor device. Fumed silica, of which a bulk density of powder before dispersed is 50 g/L or more and less than 100 g/L, is used as abrasive grains. This makes it possible to enhance a dispersion state of the fumed silica, and to realize reduction in transportation cost.
• SILICA FOR CMP, AQUEOUS DISPERSION, AND PROCESS FOR PRODUCING SILICA FOR CMP
  申请人：TOKUYAMA CORPORATION

  公开号：US20160177155A1

  公开（公告）日：2016-06-23

  To reduce scratches during polishing while ensuring an appropriately high polishing rate, provided are a silica for CMP satisfying the following (A) to (C), an aqueous dispersion using a silica for CMP, and a method of producing a silica for CMP: (A) a BET specific surface area of 40 m 2 /g or more and 180 m 2 /g or less; (B) a particle density measured by a He-gas pycnometer method of 2.24 g/cm 3 or more; and (C) a coefficient of variation in primary particle diameter calculated by TEM/image analysis of 0.40 or less.
• US7611552B2
  申请人：——

  公开号：US7611552B2

  公开（公告）日：2009-11-03