Core-level and valence-band characteristics of carbon nitride films with high nitrogen content
摘要:
Carbon nitride films with high nitrogen content were prepared by reactive pulsed-laser deposition at nitrogen partial pressures varying from 0.1 to 20.0 Torr. It was found that the nitrogen content in the films first increases with increase of the nitrogen pressure, reaches a maximum of 46 at. % at 5.0 Torr, and then decreases to 37 at. % at 20.0 Torr. The almost pure carbon nitride films were systematically characterized by using X-ray photoelectron spectroscopy (XPS) concerning the core-level and valence-band structures. Some fingerprint information, which shows the role of nitrogen in controlling the electronic structure of carbon nitride films, was found based on the XPS studies. With enhancing the nitrogen incorporation, both the binding energy and the peak intensity of the core-level and the valence-band spectra vary systematically as a function of nitrogen content in the films.
[EN] DIPHENYLETHYLENE COMPOUNDS AND USES THEREOF<br/>[FR] COMPOSES DIPHENYLETHYLENE ET LEURS UTILISATIONS
申请人:CELGENE CORP
公开号:WO2004078144A2
公开(公告)日:2004-09-16
The present invention relates to Diphenylethylene Compounds and compositions comprising a Diphenylethylene Compound. The present invention also relates to methods for preventing or treating various diseases and disorders by administering to a subject in need thereof one or more Diphenylethylene Compounds. In particular, the invention relates to methods for preventing or treating cancer or an inflammatory disorder by administering to a subject in need thereof one or more Diphenylethylene Compounds. The present invention further relates to articles of manufacture and kits comprising one or more Diphenylethylene Compounds.