METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN
申请人:Shimizu Daisuke
公开号:US20100233635A1
公开(公告)日:2010-09-16
A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.
Acenaphthylene derivative, polymer, and antireflection film-forming composition
申请人:JSR Corporation
公开号:EP1386904B1
公开(公告)日:2008-09-17
POLYMERE D'ACROLEINE BIORESSOURCE, SON PROCEDE D'OBTENTION ET SES UTILISATIONS
申请人:Arkema France
公开号:EP2288629A1
公开(公告)日:2011-03-02
COMPOSITION FOR FORMING LOWER LAYER FILM AND PATTERN FORMING METHOD
申请人:Yoshimura Nakaatsu
公开号:US20090098486A1
公开(公告)日:2009-04-16
A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1),
wherein R
1
represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R
1
s may be the same or different and two or more Xs may be the same or different.
COMPOSITION FOR FORMING RESIST LOWER LAYER FILM
申请人:Yoshimura Nakaatsu
公开号:US20110251323A1
公开(公告)日:2011-10-13
A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.