申请人:Wojtczak A. William
公开号:US20050143270A1
公开(公告)日:2005-06-30
Composition for cleaning or etching a semiconductor substrate and method for using the same. The composition may include a fluorine-containing compound as an active agent such as a quaternary ammonium fluoride, a quaternary phosphonium fluoride, sulfonium fluoride, more generally an -onium fluoride or “multi” quaternary-onium fluoride that includes two or more quaternary-onium groups linked together by one or more carbon-containing groups. The composition may further include a pH adjusting acid such as a mineral acid, carboxylic acid, dicarboxylic acid, sulfonic acid, or combination thereof to give a pH of about 2 to 9. The composition can be anhydrous and may further include an organic solvent such as an alcohol, amide, ether, or combination thereof. The composition are useful for obtaining improved etch rate, etch selectivity, etch uniformity and cleaning criteria on a variety of substrates.
用于清洗或蚀刻半导体衬底的组合物及其使用方法。该组合物可包括作为活性剂的含氟化合物,如季铵氟化物、季鏻氟化物、氟化锍,更常见的是氟化-铵或 "多 "季铵氟化物,其中包括由一个或多个含碳基团连接在一起的两个或多个季铵基团。该组合物还可进一步包括一种 pH 值调节酸,如矿物酸、羧酸、二羧酸、磺酸或它们的组合,使 pH 值约为 2 至 9。组合物可以是无水的,也可以进一步包括有机溶剂,如醇、酰胺、醚或它们的组合。该组合物有助于在各种基底上获得更好的蚀刻速率、蚀刻选择性、蚀刻均匀性和清洁标准。