N,N'-di-n-butyl-1,7-nonafluorobutylperylene-3,4:9,10-tetracarboxylic acid bisimide

• 分子结构分类: 有机化合物 - 苯类化合物 - 菲及其衍生物
• 英文名称: N,N'-di-n-butyl-1,7-nonafluorobutylperylene-3,4:9,10-tetracarboxylic acid bisimide
• 英文别名: N,N'-Dibutyl-1,7-bis(nonafluorobutyl)perylene-3,4:9,10-bisdicarbimide；7,18-dibutyl-11,22-bis(1,1,2,2,3,3,4,4,4-nonafluorobutyl)-7,18-diazaheptacyclo[14.6.2.22,5.03,12.04,9.013,23.020,24]hexacosa-1(22),2,4,9,11,13(23),14,16(24),20,25-decaene-6,8,17,19-tetrone
• 化学式: C₄₀H₂₄F₁₈N₂O₄
• 分子量: 938.613
• InChiKey: KNNBOKHASWGOLI-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  12
• 重原子数：
  64
• 可旋转键数：
  12
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  74.8
• 氢给体数：
  0
• 氢受体数：
  22

反应信息

• 作为产物：
  描述：

  N,N'-dibutyl-1,6-dibromoperylene-3,4:9,10-tetracarboxylic acid bisimide 、 全氟碘代丁烷 在 copper bronze 作用下， 以 二甲基亚砜 为溶剂， 反应 8.75h， 以80%的产率得到N,N'-di-n-butyl-1,7-nonafluorobutylperylene-3,4:9,10-tetracarboxylic acid bisimide
  参考文献：
  名称：

  Air-Stable n-Type Semiconductor:  Core-Perfluoroalkylated Perylene Bisimides

  摘要：

  A series of core-perfluoroalkylated perylene bisimides (PBls) have been efficiently synthesized by copper-mediated perfluoroalkylation of dibrominated PBIs. Their aromatic cores are highly twisted due to the steric encumbrance in the bay regions as revealed by single-crystal X-ray analysis. The organic field-effect transistors (OFETs) incorporating these new n-type semiconductors show remarkable air-stability and good field effect mobility.

  DOI：

  10.1021/ol703046w

文献信息

• Air-Stable n-Type Semiconductor:  Core-Perfluoroalkylated Perylene Bisimides
  作者：Yan Li、Lin Tan、Zhaohui Wang、Hualei Qian、Yubai Shi、Wenping Hu

  DOI：10.1021/ol703046w

  日期：2008.2.1

  A series of core-perfluoroalkylated perylene bisimides (PBls) have been efficiently synthesized by copper-mediated perfluoroalkylation of dibrominated PBIs. Their aromatic cores are highly twisted due to the steric encumbrance in the bay regions as revealed by single-crystal X-ray analysis. The organic field-effect transistors (OFETs) incorporating these new n-type semiconductors show remarkable air-stability and good field effect mobility.