2,2,7-Trimethyloctane-3,5-dione, enol form

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 2,2,7-Trimethyloctane-3,5-dione, enol form
• 英文别名: (Z)-6-hydroxy-2,7,7-trimethyloct-5-en-4-one
• 化学式: C₁₁H₂₀O₂
• 分子量: 184.27
• InChiKey: IEGZJUUPRVNSLA-YFHOEESVSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  13
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.73
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• HIGH-K DIELECTRIC FILMS AND METHODS OF PRODUCING USING CERIUM-BASED BETA-DIKETONATE PRECURSORS
  申请人：Chalker Paul Raymond

  公开号：US20110165401A1

  公开（公告）日：2011-07-07

  Methods are provided to form and stabilize high-κ dielectric films by chemical phase deposition processes using metal-source precursors and cerium-based β-diketonate precursors according to Formula I: Ce(L) x (Formula I) wherein: L is a β-diketonate; and x is 3 or 4. Further provided are methods of improving high-κ gate property of semiconductor devices by using cerium precursors according to Formula I. High-κ dielectric films are also provided comprising hafnium oxide, titanium oxide or mixtures thereof, and further containing a permittivity maintaining or increasing amount of cerium atoms.