A photo-destroyable quencher has the structure
wherein X, n, and R
1
-R
6
are defined herein, and at least one of R
2
, R
3
, R
4
, R
5
, and R
6
is halogen, nitro, C
1-12
fluorinated alkyl, cyano, aldehyde, C
2-20
ester, C
2-20
ketone, C
1-20
sulfoxyl hydrocarbyl, C
1-20
sulfonyl hydrocarbyl, or sulfonamide. The photo-destroyable quencher exhibits improved solution stability and reduced hygroscopic properties relative to triphenylsulfonium phenolate. A photoresist composition including an acid-sensitive polymer, a photoacid generator, and the photo-destroyable quencher exhibits increased contrast and/or critical dimension uniformity relative to corresponding photoresist compositions comparative photo-destroyable quenchers.
一种可被光破坏的猝灭剂具有以下结构,其中X、n和R1-R6如本文所定义,且R2、R3、R4、R5和R6中至少有一个是卤素、硝基、C1-12
氟化烷基、
氰基、醛基、C2-20酯、C2-20酮、C1-20烷基磺氧基、C1-20烷基磺酰基或
磺胺基。该可被光破坏的猝灭剂相对于三苯基砜
酚酚酚酚具有改善的溶液稳定性和减少的亲湿性能。包括酸敏感聚合物、光酸发生剂和可被光破坏的猝灭剂的光刻胶组合物相对于相应的光刻胶组合物比较照片破坏性猝灭剂具有增加的对比度和/或临界尺寸均匀性。