(5-溴-[1]萘基)-苯基酮 | 101439-12-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 中文名称: (5-溴-[1]萘基)-苯基酮
• 英文名称: (5-bromo-[1]naphthyl)-phenyl ketone
• 英文别名: (5-Brom-[1]naphthyl)-phenyl-keton；Brom-(phenyl-α-naphthyl-keton)；5-Brom-1-benzoyl-naphthalin；(5-Bromonaphthalen-1-yl)-phenylmethanone
• CAS: 101439-12-7
• 化学式: C₁₇H₁₁BrO
• 分子量: 311.178
• InChiKey: RFBIQEVHNRLPIU-UHFFFAOYSA-N

物化性质

• 熔点：
  95-96 °C
• 沸点：
  442.8±18.0 °C(Predicted)
• 密度：
  1.428±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  5.2
• 重原子数：
  19
• 可旋转键数：
  2
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  17.1
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  (5-溴-[1]萘基)-苯基酮 生成 5-bromo-[1]naphthoic acid anilide
  参考文献：
  名称：

  Preparation and Reactions of Some 2-Acylhalo-1,8-naphthalic Anhydrides

  摘要：

  DOI：

  10.1021/jo01071a009
• 作为产物：
  描述：

  萘 在 三氯化铝 、 氯仿 、 溴 作用下， 生成 (5-溴-[1]萘基)-苯基酮
  参考文献：
  名称：

  Rospendowski, Comptes Rendus Hebdomadaires des Seances de l'Academie des Sciences, 1886, vol. 102, p. 873

  摘要：

  DOI：

文献信息

• ORGANIC ELECTROLUMINESCENCE DEVICE AND AMINE COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE
  申请人：Samsung Display Co., Ltd.

  公开号：US20220115594A1

  公开（公告）日：2022-04-14

  Provided is an organic electroluminescence device according to an embodiment of the present disclosure including a first electrode, a second electrode facing the first electrode, an organic layer between the first electrode and the second electrode, and the organic layer includes an amine compound represented by Formula 1, and thus may exhibit high luminous efficiency.

  本公开的一种有机电致发光装置包括第一电极、面向第一电极的第二电极、位于第一电极和第二电极之间的有机层，并且该有机层包括由式子1表示的胺化合物，因此可能表现出高发光效率。
• Current mechanisms in VLWIR Hg1−xCdxTe photodiodes
  作者：A. I. D'Souza、R. E. Dewames、P. S. Wijewarnasuriya、G. Hildebrandt、J. M. Arias

  DOI：10.1007/bf02665838

  日期：2001.6

  VLWIR (lambda (c) similar to 15 mum to 17 ym at 78 K) detectors have been characterized as a function of temperature to determine the dominant current mechanisms impacting detector performance. I-d - V-d curves indicate that VLWIR detectors are diffusion limited in reverse and near zero bias voltages down to temperatures in the 40 K range. At 30 K the detectors are limited by tunneling currents in reverse bias. Since the detectors are diffusion limited near zero bias down to 40 K, the R(o)A(imp) versus temperature data represents the diffusion current performance of the detector as a function of temperature. The detector spectral response measurement and active layer thickness are utilized to calculate the HgCdTe layer x value and the optical activation energy E-a optical. The activation energy, E-a electrical, Obtained from the measured diffusion limited R(o)A(imp) versus temperature data is not equal to the activation energy, E-a optical, obtained from the spectral response measurement for all x values measured. E-a electrical = beta* E-a optical, where beta ranges between 0.64 and 1.0 For cutoff wavelengths in the less than or equal to 9 mum at 78 K, E-a electrical = E-a optical. E-a electrical = 0.65* E-a optical have been measured for lambda (c) = 17 mum at 78 K detectors. As the band gap energy decreases to values in the range of 70 meV and lower, it is reasonable to expect a more dominant role of band tailing effects on the transport properties of the material system. In such a picture, one would expect the optical band gap to be unmodified, whereas the intrinsic concentration could be enhanced from its value for the ideal semiconductor. Such a picture could explain the observed behavior. Further probing experiments and modeling efforts will help clarify the physics of this behavior.
• Elbs; Steinike, Chemische Berichte, 1886, vol. 19, p. 1965
  作者：Elbs、Steinike

  DOI：——

  日期：——
• Elbs, Journal fur praktische Chemie (Leipzig 1954), 1887, vol. <2> 35, p. 506
  作者：Elbs

  DOI：——

  日期：——
• Rospendowski, Comptes Rendus Hebdomadaires des Seances de l'Academie des Sciences, 1886, vol. 102, p. 873
  作者：Rospendowski

  DOI：——

  日期：——