1H-咪唑,甲磺酸 | 82220-44-8

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 唑类
• 中文名称: 1H-咪唑,甲磺酸
• 英文名称: imidazolium methanesulfonate
• 英文别名: imidazolium mesylate；Imidazolium Methanesulfonate；1H-imidazol-3-ium;methanesulfonate
• CAS: 82220-44-8
• 化学式: CH₄O₃S*C₃H₄N₂
• 分子量: 164.185
• InChiKey: UHJZDXBXQFVLBM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.09
• 重原子数：
  10
• 可旋转键数：
  0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  91.4
• 氢给体数：
  2
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  1H-咪唑,甲磺酸 、 benzo-30-crown-10 在 高氯酸 作用下， 以 氘代氯仿 、 水 为溶剂， 反应 17.0h， 生成 benzo-30-crown-10-imidazolium perchlorate
  参考文献：
  名称：

  Stolwijk, Theodorus B.; Sudhoelter, Ernst J. R.; Reinhoudt, David N., Journal of Organic Chemistry, 1989, vol. 54, # 5, p. 1000 - 1005

  摘要：

  DOI：
• 作为产物：
  描述：

  咪唑 、 甲烷磺酸 以 甲醇 为溶剂， 反应 168.0h， 生成 1H-咪唑,甲磺酸
  参考文献：
  名称：

  Organic Enantiomeric Ferroelectrics with High Piezoelectric Performance: Imidazolium l- and d-Camphorsulfonate

  摘要：

  铁电材料在日常生活和工业生产中被广泛应用，例如在存储器、传感器、电容器和传感器等方面。近期，分子铁电材料引起了广泛关注，因为它们具有结构灵活性、可调性和单一手性。化学设计为分子铁电材料开辟了一个新时代，使我们能够基于若干成熟的现象理论实现分子铁电材料的目标设计和性能优化。在本文中，通过降低分子对称性和在非铁电的咪唑铵甲磺酸盐（ImMS）中引入单一手性，我们设计了一对高温有机手性铁电材料，咪唑铵l-樟脑磺酸盐（l-ImCS）和咪唑铵d-樟脑磺酸盐（d-ImCS）。这对对映体分别在367 K (Tc(l)) 和 370 K (Tc(d)) 处经历222F2型铁电相变。需要强调的是，l-和d-ImCS的压电响应分别为19和20 pC N–1，达到了三甘氨酸硫酸盐的水平。据我们所知，这是首次单一手性的微小分子铁电材料展现出如此大的压电响应以及良好的生物相容性。此发现为精确设计高性能单一手性分子铁电材料提供了一种新的可行策略。

  DOI：

  10.1021/acs.chemmater.1c01663

文献信息

• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP
  申请人：Shibayama Wataru

  公开号：US20110143149A1

  公开（公告）日：2011-06-16

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R 1 a R 2 b Si(R 3 ) 4-(a+b) . A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供了一种用于光刻的抗阻底层膜成分，用于形成可用作硬掩模或底部防反射涂层的抗阻底层膜，或者是不与抗阻混合并具有比抗阻更高的干法蚀刻速率的抗阻底层膜。该膜形成成分包括具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物是具有水解性的有机硅烷，其分子中具有onium基团、其水解产物或其水解缩合产物。该成分用作光刻的抗阻底层膜形成成分。一种成分包括具有onium基团的硅烷化合物和不具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物在整个硅烷化合物中的比例小于1摩尔％，例如为0.01至0.95摩尔％。该水解性有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。通过将所述任一权利要求1至14中的任一成分应用于半导体基板并烘烤所述成分，可以获得抗阻底层膜。
• Resist underlayer film forming composition containing silicone having onium group
  申请人：Shibayama Wataru

  公开号：US08864894B2

  公开（公告）日：2014-10-21

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4−(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬掩膜或底部抗反射涂层的抗蚀底层膜，或者不与光刻胶混合且具有比光刻胶更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物是一种可水解的有机硅烷，在其分子中具有onium基团、其水解产物或其水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。该组合物包括具有onium基团的硅烷化合物和不具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物在整个硅烷化合物中的比例小于1%摩尔，例如0.01至0.95%摩尔。可水解的有机硅烷可以是公式的化合物：R1aR2bSi（R3）4-（a+b）。通过将所述组合物按权利要求1至14中的任一项涂覆到半导体基片上并烘烤所得到的抗蚀底层膜。
• Dabkowski, Wojciech; Michalski, Jan; Radziejewski, Czeslaw, Chemische Berichte, 1982, vol. 115, # 4, p. 1636 - 1643
  作者：Dabkowski, Wojciech、Michalski, Jan、Radziejewski, Czeslaw、Skrypczynski, Zbigniew

  DOI：——

  日期：——
• Organic Enantiomeric Ferroelectrics with High Piezoelectric Performance: Imidazolium <scp>l</scp>- and <scp>d</scp>-Camphorsulfonate
  作者：Lei Xu、Xin Mu、Xiao-Gang Chen、Han-Yue Zhang、Ren-Gen Xiong

  DOI：10.1021/acs.chemmater.1c01663

  日期：2021.7.27

  Ferroelectric materials have been widely used in daily life and industrial production, as memories, transducers, capacitors, sensors, and so forth. Recently, great interest in molecular ferroelectrics has emerged because of their structural flexibility, tunability, and homochirality. Chemical design has opened up a new era for molecular ferroelectrics, where we can realize the targeted design and performance optimization of molecular ferroelectrics upon several well-developed phenomenological theories. Herein, through the chemical design strategies of lowering the molecular symmetry and introducing homochirality upon the nonferroelectric imidazolium methanesulfonate (ImMS), we designed a pair of high-temperature organic enantiomeric ferroelectrics, imidazolium l-camphorsulfonate (l-ImCS) and imidazolium d-camphorsulfonate (d-ImCS). The enantiomers undergo a 222F2-type ferroelectric phase transition at 367 K (Tc(l)) and 370 K (Tc(d)), respectively. It should be highlighted that l- and d-ImCS show a relatively high piezoelectric response of 19 and 20 pC N–1, reaching the level of triglycine sulfate. To our knowledge, this is the first time that homochiral small-molecule ferroelectrics possess such a large piezoelectric response as well as good biocompatibility. This finding provides a new and feasible strategy for precisely designing high-performance homochiral molecular ferroelectrics.

  铁电材料在日常生活和工业生产中被广泛应用，例如在存储器、传感器、电容器和传感器等方面。近期，分子铁电材料引起了广泛关注，因为它们具有结构灵活性、可调性和单一手性。化学设计为分子铁电材料开辟了一个新时代，使我们能够基于若干成熟的现象理论实现分子铁电材料的目标设计和性能优化。在本文中，通过降低分子对称性和在非铁电的咪唑铵甲磺酸盐（ImMS）中引入单一手性，我们设计了一对高温有机手性铁电材料，咪唑铵l-樟脑磺酸盐（l-ImCS）和咪唑铵d-樟脑磺酸盐（d-ImCS）。这对对映体分别在367 K (Tc(l)) 和 370 K (Tc(d)) 处经历222F2型铁电相变。需要强调的是，l-和d-ImCS的压电响应分别为19和20 pC N–1，达到了三甘氨酸硫酸盐的水平。据我们所知，这是首次单一手性的微小分子铁电材料展现出如此大的压电响应以及良好的生物相容性。此发现为精确设计高性能单一手性分子铁电材料提供了一种新的可行策略。
• Stolwijk, Theodorus B.; Sudhoelter, Ernst J. R.; Reinhoudt, David N., Journal of Organic Chemistry, 1989, vol. 54, # 5, p. 1000 - 1005
  作者：Stolwijk, Theodorus B.、Sudhoelter, Ernst J. R.、Reinhoudt, David N.、Eerden, Johan van、Harkema, Sybolt

  DOI：——

  日期：——