A new electron transporting material for effective hole-blocking and improved charge balance in highly efficient phosphorescent organic light emitting diodes
作者:Seung-Jin Yoo、Hui-Jun Yun、Il Kang、Kuppusamy Thangaraju、Soon-Ki Kwon、Yun-Hi Kim
DOI:10.1039/c3tc00801k
日期:——
electron transport layer (ETL) in a green emitting phosphorescent organic light emitting diode, ITO/4,4′-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (30 nm)/4,4′,4′′-tris(carbazole-9-yl)triphenylamine 10 nm)/(4,4′-N,N′-dicarbazole)biphenyl (CBP) host doped with Ir(ppy)3 dopant (5%) (30 nm)/ETL (40 nm)/LiF (1 nm)/Al (100 nm), serves as an effective hole-blocking material and improves the charge balance in the
设计,合成了一种高效的新型苯并咪唑氧化膦基电子传输材料双(1-苯基-1 H-苯并[ d ]咪唑)苯基氧化膦(BIPO),经缩合,亲核取代和氧化反应合成,并经各种方法证实光谱学研究。根据热重分析和差示扫描量热法研究,它显示了451°C的热稳定性(ΔT 5%)和129°C的玻璃化转变温度。BIPO用作绿色磷光有机发光二极管ITO /中的有效电子传输层(ETL)4,4'-双[ N-(1-萘基)-N-苯基-氨基]联苯(30 nm)/ 4,4',4''-三(咔唑-9-基)三苯胺10 nm)/(4,4'- N,N'-二咔唑)联苯(CBP)掺杂有Ir(ppy) )3种掺杂剂(5%)(30 nm)/ ETL(40 nm)/ LiF(1 nm)/ Al(100 nm),可作为有效的空穴阻挡材料并改善器件中的电荷平衡,从而提高器件效率分别为22.19%,68.3 cd A -1和24.4 lm W -1,最大亮度为72080