2-(2-乙基丁氧基)乙醇 | 4468-93-3

• 分子结构分类: 有机化合物 - 有机氧化合物
• 中文名称: 2-(2-乙基丁氧基)乙醇
• 英文名称: Aethylenglykol-mono-<2-aethyl-butylaether>
• 英文别名: 2-(2-ethyl-butoxy)-ethanol；2-(2-Aethyl-butoxy)-aethanol；2-Aethyl-butanol-(1)-(2-hydroxy-aethylaether)；2-(2-Ethylbutoxy)ethanol
• CAS: 4468-93-3
• 化学式: C₈H₁₈O₂
• 分子量: 146.23
• InChiKey: ZKCAGDPACLOVBN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.4
• 重原子数：
  10
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  29.5
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  9,10-二羟基十八烷酸 、 2-(2-乙基丁氧基)乙醇 在 2-萘磺酸 、 甲苯 作用下， 生成 (+/-)-erythro-9,10-dihydroxy-octadecanoic acid-[2-(2-ethyl-butoxy)-ethyl ester]
  参考文献：
  名称：

  Esters of 9,10-dihydroxystearic acid with ether alcohols

  摘要：

  公开号：

  US02729612A1

文献信息

• PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND
  申请人：SATO Mitsuo

  公开号：US20120258402A1

  公开（公告）日：2012-10-11

  A photoresist composition includes a polymer that includes a structural unit shown by the following formula (1), and a photoacid generator. R 1 in the formula (1) represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, Z represents a group that forms a divalent alicyclic group having 3 to 20 carbon atoms together with a carbon atom bonded to X, X represents an alkanediyl group having 1 to 6 carbon atoms, Y represents a hydrogen atom or —CR 2 R 3 (OR 4 ), and R 2 to R 4 independently represent a hydrogen atom or a monovalent hydrocarbon group, provided that R 3 and R 4 optionally bond to each other to form a cyclic ether structure together with a carbon atom bonded to R 3 and an oxygen atom bonded to R 4 .

  一种光阻剂组合物包括一个聚合物，该聚合物包括下式（1）所示的结构单元，以及一个光酸发生剂。在式（1）中，R1代表氢原子、氟原子、甲基基团或三氟甲基基团，Z代表与与X键合的碳原子一起形成具有3到20个碳原子的二价脂环族基团，X代表具有1到6个碳原子的脂肪二基基团，Y代表氢原子或—CR2R3(OR4)，R2到R4独立地代表氢原子或一价烃基团，其中R3和R4可选择地相互键合以与与R3键合的碳原子和与R4键合的氧原子一起形成环状醚结构。
• [EN] NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME<br/>[FR] NOUVEAU COMPOSÉ, MATÉRIAU SEMI-CONDUCTEUR, PROCÉDÉS DE FABRICATION DE REVÊTEMENT ET SEMI-CONDUCTEUR L'UTILISANT
  申请人：MERCK PATENT GMBH

  公开号：WO2018115043A1

  公开（公告）日：2018-06-28

  An object is to provide a semiconductor material and coating having high solubility in solvents and having advantageous filling property, high heat resistance, and/or high etching resistance. Another object is to provide a method for manufacturing a semiconductor using the semiconductor material. Still another object is to provide a novel compound. Provided are: a semiconductor material consisting of a specific aromatic hydrocarbon ring derivative; methods for manufacturing a coating and a semiconductor using the semiconductor material; and a compound consisting of a specific aromatic hydrocarbon ring derivative.

  提供一种在溶剂中具有高溶解性且具有有利的填充性能、高耐热性和/或高耐蚀性的半导体材料和涂层是一个目标。另一个目标是提供一种使用该半导体材料制造半导体的方法。还有一个目标是提供一种新型化合物。提供的是：由特定芳香烃环衍生物组成的半导体材料；使用该半导体材料制造涂层和半导体的方法；以及由特定芳香烃环衍生物组成的化合物。
• COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND
  申请人：JSR CORPORATION

  公开号：US20190094695A1

  公开（公告）日：2019-03-28

  The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R 1 to R 4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R 1 to R 4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R 1 to R 4 bond. Ar 1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R 5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.

  影片形成的组合物包括一个化合物，其中包括一个公式（1）的基团和一个溶剂。在公式（1）中，R1至R4分别代表氢原子，具有1至20个碳原子的一价有机基团，或者R1至R4一起代表具有3至20个环原子的环结构，该环结构与碳原子或R1至R4键合的碳链一起。Ar1代表通过从具有6至20个碳原子的芳香环中去除（n+3）个氢原子而获得的基团。n为0至9之间的整数。R5代表一个羟基，一个卤素原子，一个硝基，或者具有1至20个碳原子的一价有机基团。
• PATTERN FORMING METHOD, UNDER COATING AGENT, AND LAMINATE
  申请人：Oji Holdings Corporation

  公开号：US20200048491A1

  公开（公告）日：2020-02-13

  It is an object of the present invention to provide a pattern forming method capable of easily forming a phase-separated structure with high accuracy, even in the case of widening the applicable range of a pattern size. The present invention relates to a pattern forming method comprising: applying an under coating agent onto a substrate, and applying a self-assembly composition for pattern formation to the surface of the substrate, onto which the under coating agent has been applied, and then forming a self-assembly film according to self-assembly phase separation, wherein the self-assembly composition for pattern formation comprises a block copolymer comprising a polymerization unit (a) having at least one selected from a structure represented by a formula ( 103 ) and a structure represented by a formula ( 104 ), and a polymerization unit (b) having a structure represented by a formula ( 105 ).

  本发明的目的是提供一种能够在扩大图案尺寸适用范围的情况下，轻松形成具有高精度的相分离结构的图案形成方法。本发明涉及一种图案形成方法，包括：在基板上涂覆底涂剂，并将用于图案形成的自组装组合物应用到已涂覆底涂剂的基板表面上，然后根据自组装相分离形成自组装膜，其中用于图案形成的自组装组合物包括一种嵌段共聚物，该嵌段共聚物包括至少具有下列结构之一的聚合单元（a）和具有下列结构的聚合单元（b）。
• BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION
  申请人：MATSUTANI Hiroshi

  公开号：US20110313122A1

  公开（公告）日：2011-12-22

  Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8 C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10 −8 A/cm 2 .

  存储器电容单元中提供的绝缘膜（绝缘膜）是在硅片1上形成的栅极3和对电极8C之间形成的。绝缘膜5,7包括一种基于硼氮烷的树脂，其介电常数不大于2.6，杨氏模量为5 GPa或更大，泄漏电流不大于1×10^-8A/cm2。