N-(2-methylpropenoyl)trimethylacetamide | 857636-06-7

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: N-(2-methylpropenoyl)trimethylacetamide
• 英文别名: 2,2-dimethyl-N-(2-methylprop-2-enoyl)propanamide
• CAS: 857636-06-7
• 化学式: C₉H₁₅NO₂
• 分子量: 169.224
• InChiKey: HOJHENDZRJOCSU-UHFFFAOYSA-N

物化性质

• 沸点：
  272.6±13.0 °C(Predicted)
• 密度：
  0.966±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  12
• 可旋转键数：
  2
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.56
• 拓扑面积：
  46.2
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  N-(2-methylpropenoyl)trimethylacetamide 、 N-甲基吡咯 在 bis((1,1,1-trifluoro-N-(trifluoromethyl)sulfonyl)methylsulfonamido)zinc 、 4,6-dibenzofurandiyl-2,2'-bis(4-phenyloxazolidine) 作用下， 以 二氯甲烷 为溶剂， 反应 8.0h， 生成 2,2-dimethyl-N-[2-methyl-3-(1-methyl-1H-pyrrol-2-yl)-propionyl]-propionamide 、 2,2-dimethyl-N-[2-methyl-3-(1-methyl-1H-pyrrol-2-yl)-propionyl]-propionamide
  参考文献：
  名称：

  对映选择性烯酸酯质子化：与α-取代的丙烯酸酯的Friedel-Crafts反应。

  摘要：

  DOI：

  10.1002/anie.200804221
• 作为产物：
  描述：

  三甲基乙酰胺 、 甲基丙烯酰氯 在 sodium hydride 作用下， 以 四氢呋喃 为溶剂， 反应 5.09h， 生成 N-(2-methylpropenoyl)trimethylacetamide
  参考文献：
  名称：

  Enantioselective Cycloadditions with α,β-Disubstituted Acrylimides

  摘要：

  The use of N-H imide templates provides a solution to the problem of rotamer control in Lewis acid catalyzed reactions of α,β-disubstituted acryloyl imides. Reactions proceed through the s-cis rotamer and with improved reactivity because A(1,3) strain is avoided. Enantioselective nitrone, nitrile oxide, and Diels-Alder cycloadditions demonstrate the principle.

  DOI：

  10.1021/ol050599d

文献信息

• BETA-AMINO ACIDS AND METHODS AND INTERMEDIATES FOR MAKING SAME
  申请人：Sibi Mukund P.

  公开号：US20110218342A1

  公开（公告）日：2011-09-08

  Disclosed are β-amino acids that are unsubstituted in the β position; that are substituted in the β position with an aryl group; that are substituted in the α position with an aryl group; that bear two substituents in the α position; and/or that are substituted in the α and β positions with groups which, together with the carbon atoms at the α and β positions, form a ring. Also disclosed are methods for making the above-mentioned β-amino acids and other β-amino acids which involve providing an α,β-unsaturated imide; converting the α,β-unsaturated imide to a 2-substituted-isoxazolidin-5-one; and converting the 2-substituted-isoxazolidin-5-one to a β-amino acid.

  披露了未在β位取代的β-氨基酸；在β位用芳基取代的β-氨基酸；在α位用芳基取代的β-氨基酸；在α位带有两个取代基的β-氨基酸；和/或在α和β位用与α和β位的碳原子一起形成环的基团取代的β-氨基酸。还披露了制备上述β-氨基酸和其他β-氨基酸的方法，包括提供α，β-不饱和亚胺；将α，β-不饱和亚胺转化为2-取代异噁唑啉-5-酮；将2-取代异噁唑啉-5-酮转化为β-氨基酸。
• Enantioselective Radical Reactions: Formation of Chiral Quaternary Centers
  作者：Mukund P. Sibi、Liwen He

  DOI：10.1055/s-2006-933116

  日期：——

  A novel addition/trapping radical reaction to establish all carbon chiral quaternary centers has been developed.

  已经开发了一种新型的加成/捕获自由基反应来建立所有碳手性四元中心。
• Topcoat compositions and pattern-forming methods
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US10042259B2

  公开（公告）日：2018-08-07

  Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R1 represents H, F, methyl or fluorinated methyl; R2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR5, wherein R5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

  面漆组合物包括：基质聚合物；表面活性聚合物，该聚合物由以下通式 (I) 的单体聚合而成： 其中R1 代表 H、F、甲基或氟化甲基； R2 代表任选取代的 C1 至 C8 亚烷基或任选取代的 C1 至 C8 氟亚烷基，任选包含一个或多个杂原子； R3 代表 H、F、任选取代的 C1 至 C10 烷基或任选取代的 C5 至 C15 芳基，任选包含一个或多个杂原子；R4 代表任选取代的 C1 至 C8 烷基、任选取代的 C1 至 C8 氟烷基或任选取代的 C5 至 C15 芳基，任选包含一个或多个杂原子；X 代表 O、S 或 NR5，其中 R5 选自氢和任选取代的 C1 至 C5 烷基；a 为 0 或 1；以及溶剂。本发明还提供了涂层基底和图案形成方法，这些基底和方法都使用了本发明的面漆组合物。本发明特别适用于光刻工艺，作为制造半导体器件的光刻胶面涂层。
• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：US20130157201A1

  公开（公告）日：2013-06-20

  A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure. In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R 1 represents a sulfur atom or an oxygen atom, R 2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.
• TOPCOAT COMPOSITIONS AND PATTERN-FORMING METHODS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20180118970A1

  公开（公告）日：2018-05-03

  Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R 1 represents H, F, methyl or fluorinated methyl; R 2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R 3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R 4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR 5 , wherein R 5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.